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All dynamic memory wholesalers & dynamic memory manufacturers come from members. We doesn't provide dynamic memory products or service, please contact them directly and verify their companies info carefully.
| Total 648 products from dynamic memory Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:NT5AD512M16C4-HR Place of Origin:CN NT5AD512M16C4-HR Memory IC Chip 8Gbit DDR4 SDRAM Memory IC FBGA96 DRAM Chip Product Description Of NT5AD512M16C4-HR NT5AD512M16C4-HR is 8Gbit DDR4 (Synchronous Dynamic Random-Access Memory) SDRAM Memory IC. Specification Of NT5AD512M16C4-HR Part Number... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:H5TQ4G63EFR-RDC Place of Origin:CN ...Memory IC Chip 4Gbit DDR3 SDRAM Memory Chip FBGA96 Product Description Of H5TQ4G63EFR-RDC H5TQ4G63EFR-RDC is a 4Gbit DDR3 synchronous dynamic random-access memory (SDRAM) chip in an FBGA-96 package, primarily designed for applications requiring high-density memory and high bandwidth, such as computer servers and high-performance computing systems. Specification Of H5TQ4G63EFR-RDC Storage Capacity: 4Gbit Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Model Number:H5AN4G6NBJR-VKC Place of Origin:CN Brand Name:Original Factory H5AN4G6NBJR-VKC Memory IC Chip 4Gb DDR4 SDRAM ETT Memory In FBGA-96 Package H5AN4G6NBJR-VKC is a DRAM (Dynamic Random Access Memory) ETT memory chip, forming part of a high-bandwidth memory solution. It is typically used in applications requiring high-... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT40A1G16KD-062E:E Place of Origin:CN ...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S80KS2563GABHB023 Place of Origin:CN ...Memory IC S80KS2563GABHB023 Integrated Circuit Chip 24FBGA IC Chip Product Description Of S80KS2563GABHB023 S80KS2563GABHB023 is 1.8 V array and I/O, synchronous self-refresh dynamic RAM (DRAM). The HYPERRAM™ device provides an xSPI (Octal) slave interface to the host system. Specification Of S80KS2563GABHB023 Part Number S80KS2563GABHB023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E512M32D1ZW-046 AIT:B Place of Origin:CN ... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Micron Technology Inc. Model Number:MT46V16M16P-5B:M Place of Origin:original ... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original Factory Model Number:MT53E2G32D4DT-046 WT:A Place of Origin:CN ... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E1G16D1FW-046 WT:A Place of Origin:CN Memory IC Chip MT53E1G16D1FW-046 WT:A 16Gbit Parallel 2.133 GHz Memory IC 200-TFBGA Description Of MT53E1G16D1FW-046 WT:A MT53E1G16D1FW-046 WT:A 16Gb Mobile Low Power SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access storage device. The eight devices have 16 internal I/ OS. These memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E2G32D4DE-046 WT:A Place of Origin:CN ...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E2G32D4DE-046 AAT:A Place of Origin:CN ...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT46H16M32LFB5-6 AIT:C Place of Origin:CN ... CMOS dynamic random access memory containing 536,870,912 bits. It is configured internally as four sets of DRAM. Specification Of MT46H16M32LFB5-6 AIT:C Organisation: 16 M x ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E1G32D2FW-046 AUT:A Place of Origin:CN Memory IC Chip MT53E1G32D2FW-046 AUT:A 32Gbit Parallel 2.133 GHz LPDDR4X Memory Product Description Of MT53E1G32D2FW-046 AUT:A MT53E1G32D2FW-046 AUT:A 32Gb Mobile low-power DDR4 SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access storage device optimized to address power consumption in battery-powered applications. The memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E768M64D4HJ-046 WT:B Place of Origin:CN Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT53E1G32D2NP-053 RS WT:C Place of Origin:CN Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT62F1536M64D8CZ-023 FAAT:C Place of Origin:CN Memory IC Chip MT62F1536M64D8CZ-023 FAAT:C 96Gbit SDRAM Mobile - LPDDR5 Memory IC Product Description Of MT62F1536M64D8CZ-023 FAAT:C MT62F1536M64D8CZ-023 FAAT:C is 96Gbit Mobile - LPDDR5 Synchronous Dynamic Random Access Memory (SDRAM) IC for Mobile ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT62F1536M64D8EK-023 AIT:C Place of Origin:CN Memory IC Chip MT62F1536M64D8EK-023 AIT:C TFBGA-441 96Gbit LVSTL LPDDR5 Memory IC Product Description Of MT62F1536M64D8EK-023 AIT:C MT62F1536M64D8EK-023 AIT:C is Automotive 96Gbit LPDDR5 Synchronous Dynamic Random Access Memory (SDRAM) with LVSTL ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT62F2G64D8CZ-023 AIT:C Place of Origin:CN Memory IC Chip MT62F2G64D8CZ-023 AIT:C 1.7V To 1.95V 128Gbit LPDDR5 DRAM Memory Product Description Of MT62F2G64D8CZ-023 AIT:C MT62F2G64D8CZ-023 AIT:C is 128Gbit Automotive LPDDR5 Synchronous Dynamic Random Access Memory for Mobile Devices and AI. The ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT62F768M64D4CZ-023 AUT:C Place of Origin:CN Memory IC Chip MT62F768M64D4CZ-023 AUT:C 48Gbit SDRAM Mobile LPDDR5 Memory Chips Product Description Of MT62F768M64D4CZ-023 AUT:C MT62F768M64D4CZ-023 AUT:C is 48Gbit LPDDR5 Synchronous Dynamic Random Access Memory (SDRAM) IC. The LPDDR5 DRAM for Mobile ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:H9HCNNNBKUMLHR-NMOR Place of Origin:CN H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200 Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200. Specification... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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