dynamic memory

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178​ Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory​ (SDRAM) Chip with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:S27KS0642GABHM023

Place of Origin:CN

...Memory IC 24-VBGA Product Description Of S27KS0642GABHM023 S27KS0642GABHM023 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S27KS0642GABHM023 Part Number S27KS0642GABHM023 Memory Size 64Mbit Memory Organization 8M x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E1G64D4NW-046 WT:C

Place of Origin:CN

Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046BWT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating ...

Brand Name:Original Factory

Model Number:MT61M256M32JE-12 AAT:A

Place of Origin:CN

...Memory IC Chip 8Gbit Parallel GDDR6 SGRAM Memory IC FBGA-180 Product Description Of MT61M256M32JE-12 AAT:A MT61M256M32JE-12 AAT:A is 2-Channels 8Gbit Parallel GDDR6 SGRAM Memory IC for Networking. MT61M256M32JE-12 AAT:A——The GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory...

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

Quick Detail: 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row wit...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E IT:E

Place of Origin:CN

... DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E IT:E Part Number MT40A1G16KD-062E IT:E Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time -

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-053 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips Product Description Of MT53E256M32D2DS-053 WT:B MT53E256M32D2DS-053 WT:B is 8Gbit SDRAM-Mobile LPDDR4 Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory...

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory...

Brand Name:Original Factory

Model Number:H5TQ4G63EFR-RDC

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3 SDRAM Memory Chip FBGA96​ Product Description Of H5TQ4G63EFR-RDC H5TQ4G63EFR-RDC is a 4Gbit DDR3 synchronous dynamic random-access memory (SDRAM) chip in an FBGA-96 package, primarily designed for applications requiring high-density memory and high bandwidth, such as computer servers and high-performance computing systems. Specification Of H5TQ4G63EFR-RDC Storage Capacity: 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E:E

Place of Origin:CN

...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ...

Brand Name:Original Factory

Model Number:S80KS2563GABHB023

Place of Origin:CN

...Memory IC S80KS2563GABHB023 Integrated Circuit Chip 24FBGA IC Chip​ Product Description Of S80KS2563GABHB023 S80KS2563GABHB023 is 1.8 V array and I/O, synchronous self-refresh dynamic RAM (DRAM). The HYPERRAM™ device provides an xSPI (Octal) slave interface to the host system. Specification Of S80KS2563GABHB023 Part Number S80KS2563GABHB023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 AIT:B

Place of Origin:CN

... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM -

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:Original Factory

Model Number:MT53E2G32D4DT-046 WT:A

Place of Origin:CN

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of