dynamic memory

Brand Name:Original Factory

Model Number:S80KS5122GABHV023

Place of Origin:CN

...Memory Chip S80KS5122GABHV023 Integrated Circuit Chip 24FBGA Memory IC​ Product Description Of S80KS5122GABHV023 S80KS5122GABHV023 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S80KS5122GABHV023 Part Number S80KS5122GABHV023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 512Mbit Memory...

Brand Name:Original Factory

Model Number:S80KS2562GABHA023

Place of Origin:CN

...Memory IC S80KS2562GABHA023 Integrated Circuit Chip 24-VBGA 256Mbit​ Product Description Of S80KS2562GABHA023 S80KS2562GABHA023 is 256Mbit HYPERRAM™ self-refresh dynamic RAM (DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS2562GABHA023 Part Number S80KS2562GABHA023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 256Mbit Memory Organization 32M x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2FW-046 WT:B 8Gbit Parallel LPDDR4X Memory IC VFBGA-200​ Product Description Of MT53E256M32D2FW-046 WT:B MT53E256M32D2FW-046 WT:B is 8Gbit Parallel SDRAM - Mobile LPDDR4X Memory IC. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M32D2FW-046 WT:B Memory Type Volatile Memory

Brand Name:Original Factory

Model Number:MT53E1536M32D4DE-046 WT:B

Place of Origin:CN

... random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory is suitable for

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT53E512M32D2FW-046 AAT:D

Place of Origin:CN

Memory IC Chip MT53E512M32D2FW-046 AAT:D 16Gbit Parallel Memory IC VFBGA-200 Product Description Of MT53E512M32D2FW-046 AAT:D MT53E512M32D2FW-046 AAT:D is a high-speedCMOS, dynamic random-access memory. The device is internally configured with x16I/O, 8-banks. Specification Of MT53E512M32D2FW-046 AAT:D Memory Size 16Gbit Memory Organization 512M x 32 Memory...

Brand Name:Original Factory

Model Number:MT40A512M16LY-062E AIT:E

Place of Origin:CN

Memory IC Chip MT40A512M16LY-062E AIT:E 1.6GHz 8Gbit Parallel Memory IC FBGA-96 Product Description Of MT40A512M16LY-062E AIT:E MT40A512M16LY-062E AIT:E is a high-speed dynamic random access memory that is internally configured with 8 groups of DRAM (for x16 configurations) and 16 groups of DRAM (for x4 and x8 configurations). Specification Of MT40A512M16LY-062E AIT:E Memory Size 8Gbit Memory Organization 512M x 16 Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory FBGA178 Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a 8Gbit, LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) Chips. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:EDB4432BBPA-1D-F-R

Place of Origin:CN

...Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip WFBGA168​ Product Description Of EDB4432BBPA-1D-F-R EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) Chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Specification Of EDB4432BBPA-1D-F-R Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-093 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory​ Product Description Of MT52L256M32D1PF-093 WT:B MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-093 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178​ Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory​ (SDRAM) Chip with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:S27KS0642GABHM023

Place of Origin:CN

...Memory IC 24-VBGA Product Description Of S27KS0642GABHM023 S27KS0642GABHM023 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S27KS0642GABHM023 Part Number S27KS0642GABHM023 Memory Size 64Mbit Memory Organization 8M x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E1536M32D4DE-046 AIT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 AIT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 AIT:B SDRAM Mobile LPDDR4 4Gbit Memory IC Product Description Of MT53E256M16D1FW-046 AIT:B MT53E256M16D1FW-046 AIT:B​ 48Gb low-power SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E1G16D1FW-046 AAT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. Specification Of MT53E1G16D1FW-046 AAT:A Memory Size 16Gbit Memory Organization 1G x 16 Memory Interface Parallel Clock Frequency 2.133 GHz Write Cycle Time - Word, Page 18ns Access Time 3.5

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2HJ-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2HJ-046 WT:B 32Gbit Parallel 2.133 GHz 3.5 ns Memory IC Product Description Of MT53E512M64D2HJ-046 WT:B MT53E512M64D2HJ-046 WT:B 32Gb Low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of