dynamic memory

Brand Name:Winbond

Model Number:W9864G6KH-6I

Place of Origin:CN

W9864G6KH-6I 1M 4 BANKS 16 BITS SDRAM High-speed Synchronous Dynamic Random Access Memory Product Specifications Part Number Speed Grade Self Refresh Current (Max) Operating Temperature W9864G6KH-5 200MHz/CL3 2mA 0°C ~ ...

Brand Name:Original

Model Number:AS4C32M16SC-7TIN

Place of Origin:Original

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...

Brand Name:Original

Model Number:AS4C32M16SC-7TIN

Place of Origin:Original

AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...

Place of Origin:PHILIPPINE

Brand Name:Integrated Silicon Solution, Inc

Model Number:IS41LV16100B-60KL

... x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Quick Detail: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE Description: The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated...

Place of Origin:CN

Brand Name:Original Factory

Model Number:S80KS5123GABHM020

Memory IC Chip S80KS5123GABHM020 200MHz Dynamic RAM With Octal SPI Interface [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips​ Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4X Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. Specification Of W9825G6KH-6I Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 256Mbit Memory Organization 16M x 16 Memory

Brand Name:Original Factory

Model Number:MT53E256M16D1DS-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200​ Product Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1DS-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2DS-053 AUT:E

Place of Origin:CN

Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory Product Description Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 12Gbit Memory...

Brand Name:Original Factory

Model Number:MT41K256M16TW-107:P

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96​ Product Description Of MT41K256M16TW-107:P MT41K256M16TW-107:P is a 4Gbit, DDR3L Synchronous Dynamic Random Access Memory (SDRAM) Chips, it is a low voltage version of the DDR3 (1.5V) SDRAM. Specification Of MT41K256M16TW-107:P Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:S80KS5122GABHV023

Place of Origin:CN

...Memory Chip S80KS5122GABHV023 Integrated Circuit Chip 24FBGA Memory IC​ Product Description Of S80KS5122GABHV023 S80KS5122GABHV023 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S80KS5122GABHV023 Part Number S80KS5122GABHV023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 512Mbit Memory...

Brand Name:Original Factory

Model Number:S80KS2562GABHA023

Place of Origin:CN

...Memory IC S80KS2562GABHA023 Integrated Circuit Chip 24-VBGA 256Mbit​ Product Description Of S80KS2562GABHA023 S80KS2562GABHA023 is 256Mbit HYPERRAM™ self-refresh dynamic RAM (DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS2562GABHA023 Part Number S80KS2562GABHA023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 256Mbit Memory Organization 32M x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory FBGA178 Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a 8Gbit, LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) Chips. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:EDB4432BBPA-1D-F-R

Place of Origin:CN

...Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip WFBGA168​ Product Description Of EDB4432BBPA-1D-F-R EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) Chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Specification Of EDB4432BBPA-1D-F-R Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-093 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory​ Product Description Of MT52L256M32D1PF-093 WT:B MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-093 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178​ Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory​ (SDRAM) Chip with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:S27KS0642GABHM023

Place of Origin:CN

...Memory IC 24-VBGA Product Description Of S27KS0642GABHM023 S27KS0642GABHM023 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S27KS0642GABHM023 Part Number S27KS0642GABHM023 Memory Size 64Mbit Memory Organization 8M x 8 Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...