static random access memory

Brand Name:Original Factory

Model Number:H5TQ4G63EFR-RDC

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3 SDRAM Memory Chip FBGA96​ Product Description Of H5TQ4G63EFR-RDC H5TQ4G63EFR-RDC is a 4Gbit DDR3 synchronous dynamic random-access memory (SDRAM) chip in an FBGA-96 package, primarily designed for applications requiring high-density memory and high bandwidth, such as computer servers and high-performance computing systems. Specification Of H5TQ4G63EFR-RDC Storage Capacity: 4Gbit Memory...

Brand Name:Original Factory

Model Number:CYEL15B102N-ZS60XM

Place of Origin:CN

...t reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 121 years while eliminating the reliability concerns,

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E:E

Place of Origin:CN

...random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E:E Part ...

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046 AIT:B

Place of Origin:CN

... configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT53E512M32D1ZW-046 AIT:B Part Number: MT53E512M32D1ZW-046 AIT:B Memory Type: Volatile Memory Format: DRAM Technology: SDRAM -

Brand Name:Micron Technology Inc.

Model Number:MT46V16M16P-5B:M

Place of Origin:original

... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...

Brand Name:CYPRESS

Model Number:FM24CL04B

Place of Origin:Original Factory

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ...

Brand Name:Original Factory

Model Number:H9HCNNNBKUMLHR-NMOR

Place of Origin:CN

H9HCNNNBKUMLHR-NMOR Memory IC Chip 2Gbit DRAM LPDDR4 Memory IC FBGA-200​ Product Description Of H9HCNNNBKUMLHR-NMOR H9HCNNNBKUMLHR-NMOR is LPDDR4 Dynamic Random Access Memory IC, 2GB Capacity, x16 Architecture, the package is FBGA-200​. Specification...

Brand Name:Original Factory

Model Number:K4A4G085WF-BCWE

Place of Origin:CN

...0 to 95°C TC. K4A4G085WF-BCWE has a memory-capacity of 4Gb and is organized as 512Mx8 coming in a RoHS-compliant BGA 78 ball package. The data-rate is specified with 3200 ...

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 IT:P

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96​ Product Description Of MT41K256M16TW-107 IT:P MT41K256M16TW-107 IT:P is 4Gbit, DDR3L Synchronous Dynamic Random Access Memory (SDRAM) Chip. DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Specification Of MT41K256M16TW-107 IT:P Type: SDRAM - DDR3L Memory...

Brand Name:Original Factory

Model Number:MT53D768M32D2NP-046 WT:A

Place of Origin:CN

...Memory IC Chip Mobile 24Gbit LPDDR4 SDRAM Memory Chip​ Product Description Of MT53D768M32D2NP-046 WT:A MT53D768M32D2NP-046 WT:A is a mobile LPDDR4 synchronous dynamic random-access memory (SDRAM) chip with a capacity of 24Gbit (768 M x 32), housed in a WFBGA-200 package. Specification Of MT53D768M32D2NP-046 WT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1071DV33-12BAXI

Place of Origin:original

...Memory Chips 48-TFBGA Package Static RAM high performance CMOS Static RAM 32Mbit Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 12ns Access...

Brand Name:CYPRESS

Model Number:FM25CL64B-GTR

Place of Origin:Original Factory In stock

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, ...

Brand Name:Original Factory

Model Number:P3A4GL4BLF-GJN

Place of Origin:CN

P3A4GL4BLF-GJN Memory IC Chip 4Gbit DDR4 SDRAM Memory IC TFBGA96 Product Description Of P3A4GL4BLF-GJN P3A4GL4BLF-GJN is a 4Gbit DDR4 Synchronous Dynamic Random‑Access Memory, package is TFBGA-96. Specification Of P3A4GL4BLF-GJN Capacity: 4Gbit Type: ...

Brand Name:Original Factory

Model Number:CXDB4ABAM-ML

Place of Origin:CN

CXDB4ABAM-ML Memory IC Chip 16Gbit LPDDR4X SDRAM Memory In FBGA-200 Package Product Overview Of CXDB4ABAM-ML CXDB4ABAM-ML is a 16Gbit LPDDR4X synchronous dynamic random-access memory utilising an FBGA-200 package. Specifications Of CXDB4ABAM-ML Capacity: ...

Brand Name:Original Factory

Model Number:NT5CB128M16JR-FL

Place of Origin:CN

NT5CB128M16JR-FL Memory IC Chip High-Speed Automotive DDR3 2Gb SDRAM Memory IC Product Description Of NT5CB128M16JR-FL NT5CB128M16JR-FL DDR3 SDRAM is a high-speed dynamic random access memory internally configured as an eight-bank DRAM. The DDR3 SDRAM uses...

Brand Name:Original Factory

Model Number:S70GL02GT12FHIV10

Place of Origin:CN

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10 device offers a fast page access time of 20 ns with a corresponding random access time of 110 ns. Specification Of S70GL02GT12FHIV10 Part Number S70GL02GT12FHIV10 Memory Size 2Gbit Memory Organization 256M x 8, 128M x 16 Memory...

Brand Name:Original Factory

Model Number:S70GL02GS11FHI010

Place of Origin:CN

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,

Brand Name:Hynix

Model Number:Hynix Memory IC

Place of Origin:South Korea, China

...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...

Brand Name:Micron

Model Number:Micron Memory IC

Place of Origin:United States

Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It...