static random access memory

Brand Name:Macronix

Model Number:MX29LV640EBTI-70G

Place of Origin:Mult-origin

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 33MHz - Low power consumption - High speed random access...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0SIT

Place of Origin:CN

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR increases the maximum bandwidth rate to 166MB/s. Specification Of MT25QU01GBBB8E12-0SIT Part Number: MT25QU01GBBB8E12-0SIT VCC: 2.7–3.6V Page Access: 20ns Random Access...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Anterwell

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Place of Origin:PHILIPPINE

Brand Name:Qimonda AG

Model Number:HYB25DC512160DE-5

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate ...

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory...

Brand Name:Macronix

Model Number:MX30LF1G08AA-TI

Place of Origin:original

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a write endurance of up to 100K cycles. The

Brand Name:Original Factory

Model Number:MT53E2G32D4DT-046 WT:A

Place of Origin:CN

... CMOS dynamic random access storage device with multi-chip package (MCP) and package overlay (PoP) design to save PCB space. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of

Brand Name:Original Factory

Model Number:MT53E2G32D4DE-046 WT:A

Place of Origin:CN

...) is a high-speed CMOS dynamic random access storage device. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. Typical applications ...

Brand Name:Original Factory

Model Number:MT53E768M64D4HJ-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M64D4HJ-046 WT:B Automotive 48G LPDDR4 Memory IC Product Description Of MT53E768M64D4HJ-046 WT:B MT53E768M64D4HJ-046 WT:B 48Gb low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device. Optimized to address power consumption in battery-powered applications, this memory...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-053 RS WT:C

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. These memory...

Place of Origin:PHILIPPINE

Brand Name:SPANSION

Model Number:S29GL512P12TFIV20

...Memory featuring 90 nm MirrorBit Process Technology Description: The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access...

Brand Name:Original Factory

Model Number:MT25QL02GCBB8E12-0AAT

Place of Origin:CN

...application, saves instruction overhead, and reduces random access time. Specification Of MT25QL02GCBB8E12-0AAT Part Number MT25QL02GCBB8E12-0AAT Memory Size: 2 Gbit Interface Type: SPI Maximum Clock Frequency: 133 MHz Organisation: 256 M x 8 Features Of

Brand Name:Infineon

Model Number:FM24CL64B-GTR

Place of Origin:China

... I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp andamp; 8-lead TSSOP andnbsp; Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K andtimes; 8 andnbsp; ❐ High-...

Brand Name:Original Factory

Model Number:MT41K512M16VRN-107 IT:P

Place of Origin:CN

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ...

Brand Name:CYPRESS

Model Number:FM25V10-GTR

Place of Origin:original

... Circuit IC Chip is a non-volatile ferroelectric random access memory (F-RAM) device. It features a unique combination of high performance, low power consumption and high endurance, making it an ideal choice for ...

Model Number:FM24W256-G

Brand Name:Original

Place of Origin:US

...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...

Model Number:MOC3052

Place of Origin:original factory

...Random Phase Optoisolators Triac Drivers The MOC3051 Series consists of a GaAs infrared LED optically coupled to a non–Zero–crossing silicon bilateral AC switch (triac). The MOC3051 Series isolates low voltage logic from 115 and 240 Vac lines to provide random phase control of high current triacs or thyristors. The MOC3051 Series features greatly enhanced static...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1061G30-10ZSXI

Place of Origin:original

... Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.2V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface ...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1021DV33-10ZSXI

Place of Origin:original

...-10ZSXI Flash Memory Chips 44-TSOP Package 1Mbit Static RAM Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 1Mbit Memory Organization 64K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ...