multiple type input electronic pressure switch

Brand Name:onsemi

Model Number:NTR2101PT1G

Place of Origin:original

...(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:NTR4170NT1G

Place of Origin:original

...(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.76 nC @ 4.5 V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:FDBL9406-F085T6

Place of Origin:original

...) @ Id 3.5V @ 190µA Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4960 pF @ 25 V

Brand Name:onsemi

Model Number:FDBL0150N60

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 169 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10300 pF @

Brand Name:onsemi

Model Number:FDN5618P

Place of Origin:original

...Electronics TO-236-3 Transistor High Performance Low On Resistance High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 170mOhm @ 1.25A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13.8 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDC655BN

Place of Origin:original

...Electronics SOT-23-6 High Voltage Current Switching Ideal Automotive Industrial Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 6.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDN304P

Place of Origin:original

...Electronics N-Channel Enhancement Mode Transistor SOT-23-6 High Speed Switching Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 52mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V Vgs (Max) ±8V Input...

Brand Name:onsemi

Model Number:NTR4171PT1G

Place of Origin:original

...Electronics – For High Efficiency Power Conversion and Switching Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.6 nC @ 10 V Vgs (Max) ±12V Input...

Brand Name:onsemi

Model Number:FDT86244

Place of Origin:original

...Electronics High-Speed Switching and High-Power Conversion FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 128mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FQP55N10

Place of Origin:original

...Electronics High-Performance High-Efficiency Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 28mOhm @ 44A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDD8880

Place of Origin:original

...Electronics TO-252-3 Package N-Channel PowerTrench® MOSFET 30V General fast switching speed FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 13A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V Vgs (Max) ±20V Input

Brand Name:onsemi

Model Number:FDB035N10A

Place of Origin:original

...Electronics High-Performance Reliable Switching Solution for Power Conversion Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.5mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V Vgs (Max) ±20V Input

Brand Name:onsemi

Model Number:FDV304P

Place of Origin:original

...Electronics - High Performance Low On-Resistance Switching for Superior Efficiency and Reliability FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25 V Current - Continuous Drain (Id) @ 25°C 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V Rds On (Max) @ Id, Vgs 1.1Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V Vgs (Max) ±8V Input

Brand Name:onsemi

Model Number:NDS0605

Place of Origin:original

...Electronics for High-Efficiency High-Speed Switching Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:MMBF170

Place of Origin:original

...Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5Ohm @ 200mA, 10V Vgs(th) (Max) @ Id 3V @ 1mA Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:BVSS138LT1G

Place of Origin:original

...Electronics - High-Performance Switching Solutions for Power Management Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous Drain (Id) @ 25°C 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 3.5Ohm @ 200mA, 5V Vgs(th) (Max) @ Id 1.5V @ 1mA Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTR1P02LT1G

Place of Origin:original

...Electronics - High-Speed Switching and Reliable Protection for Power Control Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 220mOhm @ 750mA, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4 V Vgs (Max) ±12V Input

Brand Name:onsemi

Model Number:FQD19N10LTM

Place of Origin:original

...(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V Vgs (Max) ±20V Input Capacitance (Ciss)

Brand Name:onsemi

Model Number:FDMA86251

Place of Origin:original

...Electronics 6-WDFN N-Channel Single PowerTrench®Primary Switch provide maximum efficiency FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 175mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDMS86252

Place of Origin:original

...Electronics N-Channel Shielded Gate 150 V high efficiency superior switching performance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 51mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V Vgs (Max) ±20V Input