multiple type input electronic pressure switch

Brand Name:onsemi

Model Number:NTMFS5C460NLT1G

Place of Origin:original

...Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDMS86105

Place of Origin:original

...Electronics N-Channel Enhancement Mode Device High Performance Reliable Power Switching Solution FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 34mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V Vgs (Max) ±20V Input

Brand Name:onsemi

Model Number:NCP167AMX280TBG

Place of Origin:original

...Electronics High-Efficiency and Low-Voltage Switching Solution for Your Power Needs FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.1 nC @ 4.5 V Vgs (Max) ±6V Input

Brand Name:onsemi

Model Number:NVTR4503NT1G

Place of Origin:original

...Electronics Transistor for High-Speed Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 110mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:2N7002ET7G

Place of Origin:original

...Electronics TO-236-3 Package Low On-Resistance High Efficiency Fast Switching Speed FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.81 nC @ 5 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:2N7002L

Place of Origin:original

...Electronics TO-236-3 Transistor High Speed Switching Linear Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 115mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTK3043NT1G

Place of Origin:original

... On (Max) @ Id, Vgs 3.4Ohm @ 10mA, 4.5V Vgs(th) (Max) @ Id 1.3V @ 250µA Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 11 pF @ 10 V FET Feature -

Brand Name:onsemi

Model Number:FDMS86182

Place of Origin:original

...(th) (Max) @ Id 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs 24 nC @ 6 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:NTMFS5C430NLT1G

Place of Origin:original

...Electronics 8-PowerTDFN N-Channel Enhancement Mode Resistance Fast Switching Capability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 200A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDB110N15A

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4510 pF @

Brand Name:onsemi

Model Number:FDD86381-F085

Place of Origin:original

...Electronics TO-252-3 Switching Transistor High Current High Voltage Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 21mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTHL190N65S3HF

Place of Origin:original

...Electronics TO-247-3 Transistor for High Current Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 430µA Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V Vgs (Max) ±30V Input...

Brand Name:onsemi

Model Number:FCH165N60E

Place of Origin:original

...) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss)

Brand Name:onsemi

Model Number:NTLJS2103PTBG

Place of Origin:original

...(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:NVGS5120PT1G

Place of Origin:original

...Electronics N-Channel 100V 3.3A SOT-23-6 Package Low Gate Charge High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 111mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.1 nC @ 10 V Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:FDD86250

Place of Origin:original

...) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @

Brand Name:onsemi

Model Number:FDPF51N25

Place of Origin:original

...) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V Vgs (Max) ±30V Input Capacitance (Ciss) (Max)

Brand Name:onsemi

Model Number:BSS123LT1G

Place of Origin:original

...Electronics N-Channel Enhancement Mode Field Effect Transistor TO-236-3 Package Switching FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 10V Vgs(th) (Max) @ Id 2.6V @ 1mA Vgs (Max) ±20V Input...

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

...Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs (Max) ±20V Input

Brand Name:onsemi

Model Number:NTS4001NT1G

Place of Origin:original

... Vgs(th) (Max) @ Id 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 1.3 nC @ 5 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @