various environments photodiode sensor

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4K11P6425B

Sensor IC AFBR-S4K11P6425B 25.5 V Photodiode 430nm Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4K33C0135L

Sensor IC AFBR-S4K33C0135L 85nA Photodiode 430nm 12-WFBGA [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4K33P6447L

Sensor IC AFBR-S4K33P6447L 30.25 V Photodiode 430nm Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4K33C0147L

Sensor IC AFBR-S4K33C0147L 430nm Photodiodes Arrays Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4K33C0115L

Sensor IC AFBR-S4K33C0115L 30.25 V Photodiodes Arrays Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AFBR-S4N44P044M

Sensor IC AFBR-S4N44P044M Silicon Photomultiplier Array Photodiodes [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AEPD-D0F2-00000

Sensor IC AEPD-D0F2-00000 30V 10nA 150W Silicon PIN Photodiode SMD-3 [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:AEPD-C0D0-00000

Sensor IC AEPD-C0D0-00000 Silicon PIN Photodiode For White Goods [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:ARRAYRDM-0112A20-QFN-TR

Sensor IC ARRAYRDM-0112A20-QFN-TR Photodiodes NIR-enhanced For Automotive LiDAR Applications [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent ...

Brand Name:Hamamatsu

Model Number:G8370-81

Place of Origin:Japan

Product Description: G8370-81 InGaAs PIN Photodiode Low PDL Polarization Dependence Loss Features: Low PDL(polarization dependent loss) InGaAs PIN photodiode G8370-81 has low PDL (polarization dependent loss), large shitter resistance and very low noise...

Brand Name:Hamamatsu

Model Number:S3071

Place of Origin:Japan

Product Description: S3071 Si PIN Photodiode Large Photosensitive Area High Speed TO-8 Package Features: Large area high speed silicon PIN photodiode The S3071 has a large photosensitive area, but has excellent frequency response at 40 MHz. This diode is ...

Brand Name:Hamamatsu

Model Number:S2387-66R

Place of Origin:Japan

Product Description: S2387-66R Silicon Photodiode For Universal Photometry From Visible To Infrared Low Dark Current Features: Large area high speed silicon PIN photodiode The S2387-66R has a large photosensitive area, but has excellent frequency response...

Brand Name:Hamamatsu

Model Number:S5106

Place of Origin:Japan

Product Description: S5106 Si Pin Photodiode Chip Carrier Package For Surface Mounting Suitable For Reflow Soldering Features: S5106 Si PIN is a Si PIN photodiode sealed in the chip support, suitable for surface mount using automatic solder reflux process...

Brand Name:Hamamastu

Model Number:S5821-01 S7509 S1133 S5106 S2386-44K S1223 S3071 S12742-254

Place of Origin:Japan

Product Description: S5821-01 is a high-speed silicon PIN photodiode with high sensitivity in a wide spectral range from visible to near-infrared light. The S5821-01 delivers high performance and reliability at a low cost. peculiarity - High speed response...

Brand Name:HAMAMATSU

Model Number:S6931-01

Place of Origin:Japan

Product Description: S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band Features: Silicon photodiode molded into a transparent plastic package peculiarity - Visible to near infrared band (suppressed infrared ...

Brand Name:HAMAMATSU

Model Number:S1336-18BK

Place of Origin:Japan

Product Description: S1336-18BK Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV ...

Brand Name:HAMAMATSU

Model Number:S1336-18BQ

Place of Origin:Japan

Product Description: S1336-18BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes Features: Suitable for precise photometry in ultraviolet to near-infrared bands peculiarity - High sensitivity in UV ...

Model Number:S2386-44K S2386-5K S2386-45K S2386-8K S2386-18K

Place of Origin:Japan

Silicon Pin Photodiode S2386-44K S2386-5K S2386-45K S2386-8K S2683-18K High Sensitivity In The Near-infrared Band Silicon photodiodes S2386-44K Suitable for visible to near-infrared, universal photometer Features - High sensitivity in the near-infrared ...

Model Number:S1337-66BQ S1337-33BQ

Place of Origin:Japan

Silicon photodiodes S1337-66BQ It is suitable for precise photometry in the ultraviolet to infrared band Features - High UV sensitivity: QE 75% (λ=200 nm) - Low capacitance Maximum Sensitivity Wavelength (Typical) 960 nm Dark current (max) 100 pA Rise Time...

Model Number:S1337-33BR S1337-66BR

Place of Origin:Japan

Silicon photodiodes S1337-66BR It is suitable for precise photometry in the ultraviolet to infrared band Features - Low capacitance Maximum Sensitivity Wavelength (Typical) 960 nm Light sensitivity (typical) 0.62 A/W Rise Time (Typical) 1 μs Junction ...