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Model Number:40H13A

Product Overview The 40H13A is an N-channel Trench Power MOSFET designed for high current switching applications. It features ultra-low on-resistance and high UIS (Unity Avalanche Energy) capability, making it suitable for applications requiring efficient...

Model Number:055N85

...-low on-resistance and high UIS (Unity Inverse Series) capabilities with 100% testing. This MOSFET is suitable for 64V E-Bike controllers, hard-switched, and high-frequency ...

Model Number:13N50F

13N50F N-Channel Power MOSFET The 13N50F is an N-Channel Power MOSFET designed with an advanced planar process, offering 100% UIS and Rg tested for enhanced reliability. It is ideal for power supply and AC/DC LED lighting applications, providing efficient ...

Model Number:80N03

.... It offers excellent package heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is 100% UIS and VDS tested, making it suitable for DC-DC converters, power management functions, and industrial and motor drive applications.Product...

Model Number:HSM4094

...designed for high-efficiency applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and or-ing circuits. This RoHS and Halogen-Free compliant component is 100% UIS...

Model Number:20N06

...PWM applications, and general power management tasks. This MOSFET is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.Product Attributes Certifications: Halogen-free; RoHS-compliantTechnical Specifications Parameter ...

Model Number:20N10

...20A N-channel Power Trench MOSFET designed for various power management applications. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch and PWM applications. This device is 100% UIS and Vds tested, and is Halogen-free and ...

Model Number:HSBA4050A

...HSBA4050A is a N-Channel, 40V fast switching MOSFET designed for high-current applications. Featuring advanced trench technology, it offers low gate charge, high current capability, and 100% UIS tested performance. This MOSFET is suitable for Synchronous ...

Model Number:100N03

.... It offers excellent package heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is 100% UIS and VDS tested, making it suitable for DC-DC converters, power management functions, and industrial and motor drive applications.Product...

Model Number:HSBA4094

... designed for fast switching applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it ideal for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS...

Model Number:HSH4070

...designed for high-current applications. Featuring advanced trench technology, it offers low gate charge and high current capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing applications. This RoHS and Halogen-Free compliant component is 100% UIS...

Model Number:HSU4094

...capability, making it suitable for synchronous rectification in SMPS, DC/DC converters, and Or-ing circuits. This MOSFET is 100% UIS and EAS tested, RoHS and Halogen-Free compliant, and guaranteed for 100% EAS. Product Attributes Brand: HS-Semi Technology:

Model Number:HSBA4054

Product Overview The HSBA4054 is a N-Channel 40V Fast Switching MOSFET designed with Advanced Trench Technology. It offers low gate charge and is 100% UIS Tested, making it suitable for high-efficiency applications. Key benefits include fast switching ...

Model Number:VBP165I80

...designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS...

Model Number:VBE16I10

...making it suitable for demanding power supply and industrial applications. The device is avalanche energy rated (UIS) and offers a maximum junction temperature of 175C. Key application areas include telecommunications (server and telecom power supplies),

Model Number:VBP165I60

...designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS...

Model Number:VBP16I80

...), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of applications including telecommunications power supplies, lighting ballasts, consumer and computing power supplies, ...

Model Number:VBP16I40

...designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS...

Model Number:VBE16I07

...VBE16I07 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, ultra-low gate charge (Qg), and is avalanche energy rated (UIS). This IGBT is suitable for a wide range of ...