superjunction power mosfet to 252

Brand Name:Lingxun

Place of Origin:China

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Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Ultra Small Package Superjunction Power MOSFET with Large EMI Margin *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, ...

Brand Name:Infineon Technologies

Model Number:SPW11N80C3FKSA1

Place of Origin:Multi-origin

Listing for SPW11N80C3FKSA1 MOSFET Power Electronics Product: SPW11N80C3FKSA1 MOSFET Power Electronics Features: - 800V N-Channel Superjunction MOSFET - Low Gate Charge (Qg) - Low On-State Resistance (Rdson) - High Current Capability - Low Inter-Drain ...

Brand Name:IR

Model Number:IRLR2905TRPBF

Place of Origin:TAIWAN

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMYS1D3N04C

High Power MOSFET NVMYS1D3N04C Single N-Channel 40 V 1.15Ω 252 A [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:Original Factory

Model Number:IPD06P004N

Place of Origin:CN

... is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) ...

Place of Origin:/

Brand Name:ST

Model Number:STD12NE06

... MOTOR CONTROL (DISK DRIVES,etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ​ Part No STD12NE06 Manufacturer ST Package TO-252 Description N - CHANNEL 60V - 0.08ohm - 12A -

Brand Name:IR

Model Number:IRLR2905TRPBF

Place of Origin:TAIWAN

IRLR2905TRPBF TO-252 Power Mosfet Transistor Integrated circuit Chip IC Electronics IRLR2905TRPBF ±15kV ESD Protected, +3V to +5.5V, 1Microamp, 250kbps, RS-...

Brand Name:STMicroelectronics

Model Number:STD2N105K5

...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.05 kV Id - Continuous ...

Brand Name:INFINEON

Model Number:IPD075N03LG

Place of Origin:original

ISO9001.pdf IPD075N03LG is an N-channel MOSFET transistor. The following are the applications, conclusions, and parameters of this transistor: Application: Power switch and DC-DC converter Motor driver Automotive electronic equipment Industrial automation ...

Model Number:15N10

Place of Origin:Guangdong, China

Brand Name:KAIGENG

15N10 TO-252 Electronic Components Diodes Engine Spot MOS FET N-Channel New Original 15N10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:JEUNKEI

Model Number:JY4N8M

Place of Origin:China

General Description: Features: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable ...

Brand Name:Hua Xuan Yang

Model Number:30P03X TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wide variety of applications. Mosfet Power Transistor General Features VDS=-30V,ID=-40A RDS(ON)<20mΩ@ VGS=10V RDS(ON)<32mΩ@ VGS=4.5V Mosfet Power Transistor Application ● Power...

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 30...

Brand Name:Alpha & Omega Semiconductor Inc.

Model Number:AOD4454

Place of Origin:CHINA

... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -

Brand Name:Infineon Technologies

Model Number:IPD060N03LGATMA1

... range OptiMOSª3 Power-Transistor,MOSFET N-CH 30V 50A TO-252 Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-...

Model Number:AOD609

Brand Name:Original

Place of Origin:US

Product Description Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 12A Rds On (Max) @ Id, Vgs 30mOhm...

Brand Name:original

Model Number:IRFR1018EPBF

Place of Origin:original

...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET

Brand Name:Infineon

Model Number:IPB60R099P7

Place of Origin:Original

...ª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the