smd transistor code

Place of Origin:Original

SI5515DC-T1-E3 Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A, 3A Rds On (Max) @ Id, Vgs 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ ...

Place of Origin:Original

SI5908DC-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A Rds On (Max) @ Id, Vgs 40 mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ ...

Place of Origin:Original

QH8MA4TCR Specifications Part Status Active FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A, 8A Rds On (Max) @ Id, Vgs 16 mOhm @ 9A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (...

Place of Origin:Original

TT8J2TR Specifications Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 84 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate ...

Place of Origin:Original

US6K4TR Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A Rds On (Max) @ Id, Vgs 180 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate ...

Place of Origin:Original

ECH8697R-TL-W Specifications Part Status Active FET Type 2 N-Channel (Dual) Common Drain FET Feature Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 24V Current - Continuous Drain (Id) @ 25°C 10A Rds On (Max) @ Id, Vgs 11.6 mOhm @ 5A, 4.5V Vgs(...

Place of Origin:Original

VT6M1T2CR Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100mA Rds On (Max) @ Id, Vgs 3.5 Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id 1V...

Place of Origin:Original

QS8M11TCR Specifications Part Status Not For New Designs FET Type N and P-Channel FET Feature - Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - ...

Place of Origin:Original

AON4807_001 Specifications Part Status Obsolete FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A Rds On (Max) @ Id, Vgs 68 mOhm @ 4A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA ...

Place of Origin:Original

TT8K2TR Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.5A Rds On (Max) @ Id, Vgs 90 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 1mA Gate...

Brand Name:To shi ba

Model Number:TK15A20D,S4X(S

Place of Origin:Shenzhen, China

SFH6156-2T DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous ...

Brand Name:Original brand

Model Number:STL26N60DM6

Place of Origin:Original

Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines...

Brand Name:Original Manufacturer

Model Number:STGWA60H65DFB

Place of Origin:Original

New Original IC chips IGBT Transistors 650V 80A 375W STGWA60H65DFB in stock Product Description Product Attributes TYPE DESCRIPTION SELECT ALL Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer STMicroelectronics Series - ...

Brand Name:original

Model Number:FOD817B3SD

Place of Origin:original

FOD817B3SD Optocouplers / Photocouplers Transistor Output Optocouplers ♦AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups ♦ FOD814: 20–300% ♦ FOD814A: 50–150% ♦ FOD817: 50–600% ♦ FOD817A: 80–160% ♦ FOD817B: 130–260% ♦ FOD817C: 200–400...

Brand Name:Texas Instruments

Model Number:LM5109BQNGTTQ1

Place of Origin:N/S

...Transistor Texas Instruments/TI LM5109BQNGTTQ1 ECAD Module PCB Symbol,Footprint & 3D Model Fake Threat In the Open Market 34 pct. Supply and Demand Status Limited Popularity Medium Manufacturer Homepage www.ti.com Win Source Part Number 1200388-LM5109BQNGTTQ1 MSL Level 1 (Unlimited) Manufacturer Pack Quantity 1 Family Part Number LM5109 Supplier Device Package 8-WSON (4x4) Manufacturer Package 8-WFDFN Exposed Pad Mounting Style SMD

Model Number:PUMH11-QX

Product Overview The Nexperia PUMH11-Q is an NPN/NPN Resistor-Equipped Transistor (RET) housed in a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, ...

Model Number:PBSS8110T,215

Product Overview The Nexperia PBSS8110T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, ...

Model Number:MMBT3904,215

...Overview The Nexperia MMBT3904 is a high-performance NPN switching transistor designed for general switching and amplification applications. Housed in a compact SOT23 Surface-Mounted Device (SMD) plastic package, this AEC-Q101 qualified component offers a ...

Model Number:PBSS4350TVL

Product Overview The Nexperia PBSS4350T is an NPN low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It offers a low collector-emitter saturation voltage (VCEsat) and corresponding low RCEsat, high ...

Model Number:PMST3904,115

...Nexperia PMST3904 is an NPN switching transistor designed for general amplification and switching applications. This AEC-Q101 qualified component is housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering a collector ...