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All random access memory wholesalers & random access memory manufacturers come from members. We doesn't provide random access memory products or service, please contact them directly and verify their companies info carefully.
| Total 1939 products from random access memory Manufactures & Suppliers |
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Brand Name:Hynix Model Number:Hynix Memory IC Place of Origin:South Korea, China ...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... |
Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong |
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Brand Name:Micron Model Number:Micron Memory IC Place of Origin:United States Micron Memory IC Micron Memory IC Integrated Circuit Chips Electronics Components Micron Technology, Inc. is an American producer of computer memory and computer data storage including dynamic random-access memory, flash memory, and USB flash drives. It... |
Shenzhen E-Top Semiconductor equipment Co., Ltd
Guangdong |
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Brand Name:Original Factory Model Number:MT40A512M16LY-062E AUT:E Place of Origin:CN 8Gbit Memory Chip MT40A512M16LY-062E AUT:E Integrated Circuit Chip 96FBGA IC Chip Product Description Of MT40A512M16LY-062E AUT:E MT40A512M16LY-062E AUT:E The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT40A1G16KH-062E AIT:E Place of Origin:CN ... Circuit Chip MT40A1G16KH-062E AIT:E 1.6 GHz DRAM DDR4 Memory IC Product Description Of MT40A1G16KH-062E AIT:E MT40A1G16KH-062E AIT:E is a high-speed dynamic random-access memory internally configured as an 8-bank DRAM for the x16 configuration and as a 16... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:CY15B104QI-20LPXC Place of Origin:CN 4Mbit SPI 20 MHz Ferroelectric RAM Memory IC CY15B104QI-20LPXC Surface Mount Product Description Of CY15B104QI-20LPXC CY15B104QI-20LPXC ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:CXDB4CBAM-ML-A Place of Origin:CN CXDB4CBAM-ML-A Memory IC Chip 8Gbit LPDDR4/4X Ultra-Low Power Double Data Rate Dynamic Random Access Memory [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S29GL256S90DHI020 Place of Origin:CN ...Memory IC FBGA64 Product Description Of S29GL256S90DHI020 S29GL256S90DHI020 is MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. S29GL256S90DHI020 offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. Specification Of S29GL256S90DHI020 Part Number S29GL256S90DHI020 Memory Type Non-Volatile Memory... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Microchip Technology Model Number:AT24CS08-STUM-T Place of Origin:original ...Memory for High Performance Data Storage Product Description: The AT24CS08-STUM-T is a Flash Memory chip that provides 8-Kbit of memory in a small, low-power 8-pin package. It features an I2C® serial interface and is capable of storing up to 1024 bytes of data. The device is organized as 128 pages of 8 bytes each and can be accessed using the device’s random access... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Original Factory Model Number:S29GL256S10DHB023 Place of Origin:CN ... technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:S29GL01GS10FHI010 Place of Origin:CN ... on 65-nm process technology. It offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Place of Origin:PHILIPPINE Brand Name:Ramtron International Corporation Model Number:FM24C256-SE ...Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories... |
Mega Source Elec.Limited
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Place of Origin:PHILIPPINE Brand Name:Advanced Micro Devices Model Number:AM28F010-90PC ...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The |
Mega Source Elec.Limited
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Place of Origin:PHILIPPINE Brand Name:Macronix International Model Number:MX29LV040TC-55 ...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is packaged in ... |
Mega Source Elec.Limited
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Brand Name:original Model Number:FM25L256-G Place of Origin:original ... memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. |
Walton Electronics Co., Ltd.
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Brand Name:SAMSUNG Model Number:K4A8G165WC-BITD Place of Origin:KR Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD JEDEC standard 1.2V(1.14V-1.26V) VDDo = 1.2V(1.14V-1.... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:FORESEE Model Number:F60C1A0002-M69W Place of Origin:CN Dynamic Random Access Memory DRAM IndustrialDDR3l DDR3Lx16 2Gb F60C1A0002-M69W Device Features Density: 2G bits Organization 128Meg x 16 bits ... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:ISSI Model Number:IS43LQ32256B-062BLI Place of Origin:CN Dynamic Random Access Memory DRAM 8Gb x16 x2 channel Mobile LPDDR4/LPDDR4X IS43LQ32256B-062BLI FEATURES • Configuration: - 256Mb x16 x 2 channels - 8 ... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:Micron Technology Inc. Model Number:MT41K128M16JT-125:K Place of Origin:original ...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns Why buy from us >>> Fast / Safely / |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:PHILIPPINE Brand Name:Ramtron International Corporation Model Number:FM1608-120 Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides... |
Mega Source Elec.Limited
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Brand Name:Alliance Memory, Inc. Model Number:AS4C2M32SA-6TCN Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ... |
Sanhuang electronics (Hong Kong) Co., Limited
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