ram random access memory

Place of Origin:PHILIPPINE

Brand Name:Macronix International

Model Number:MX29LV040TC-55

...EQUAL SECTOR FLASH MEMORY Description: The MX29LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX29LV040 is packaged in ...

Brand Name:SAMSUNG

Model Number:K4A8G165WC-BITD

Place of Origin:KR

Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD JEDEC standard 1.2V(1.14V-1.26V) VDDo = 1.2V(1.14V-1....

Brand Name:FORESEE

Model Number:F60C1A0002-M69W

Place of Origin:CN

Dynamic Random Access Memory DRAM IndustrialDDR3l DDR3Lx16 2Gb F60C1A0002-M69W Device Features Density: 2G bits Organization 128Meg x 16 bits ...

Brand Name:ISSI

Model Number:IS43LQ32256B-062BLI

Place of Origin:CN

Dynamic Random Access Memory DRAM 8Gb x16 x2 channel Mobile LPDDR4/LPDDR4X IS43LQ32256B-062BLI FEATURES • Configuration: - 256Mb x16 x 2 channels - 8 ...

Brand Name:Micron Technology Inc.

Model Number:MT41K128M16JT-125:K

Place of Origin:original

...: TSOP • VDD: 1.8V • Operating Temperature: -40C to +85C • Organization: x16 • Features: low latency, high speed random access, fast read and write times, high reliability and endurance • Access Time: 20ns Why buy from us >>> Fast / Safely /

Brand Name:Alliance Memory, Inc.

Model Number:AS4C2M32SA-6TCN

Product Details Functional description The AS4C256K16E0 is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with ...

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT4LC4M16R6TG-5

...-speed CMOS, dynamic random-access memory device containing 67,108,864 bits and designed to operate from 3V to 3.6V. The device is functionally organized as 4,194,304 locations containing 16 bits each. The 4,194,304 memory locations are arranged in 4,096...

Brand Name:CYPRESS

Model Number:FM16W08-SGTR

Place of Origin:Multi-origin

... Random Access Memory (SRAM) in space-saving 8-pin plastic SOP package with an access time of 15ns. Features: • Low power consumption • Wide voltage range: 1.8V to 3.6V • High performance: 15ns access time • Low cost • 1Mbit capacity • 8-...

Brand Name:CYPRESS

Model Number:CY62167EV30LL-45BVXI

Place of Origin:original

...: Memory Function: SRAM (Static Random Access Memory) Interface: Serial/Parallel Data Width: 32-bit Organization: 16K x 32 Speed: 45 MHz Mounting Type: ...

Brand Name:Macronix

Model Number:MX29LV640EBTI-70G

Place of Origin:Mult-origin

...Memory Chips Product Features: - 70nm process technology - 4M-bit capacity (512K x 8) - Low voltage operation: 1.65 to 1.95V - Access time: 70ns (max) - Single power supply - Fast page mode operation up to 33MHz - Low power consumption - High speed random access...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0SIT

Place of Origin:CN

...Memory IC Product Description Of MT25QU01GBBB8E12-0SIT MT25QU01GBBB8E12-0SIT's nonvolatile locking configuration can also be locked, as well password-protected. MT25QU01GBBB8E12-0SIT's twin-quad serial NOR increases the maximum bandwidth rate to 166MB/s. Specification Of MT25QU01GBBB8E12-0SIT Part Number: MT25QU01GBBB8E12-0SIT VCC: 2.7–3.6V Page Access: 20ns Random Access...

Brand Name:Infineon / CYPRESS

Model Number:CY7C1071DV33-12BAXI

Place of Origin:original

...Memory Chips 48-TFBGA Package Static RAM high performance CMOS Static RAM 32Mbit Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 12ns Access...

Brand Name:CYPRESS

Model Number:FM25V01A-GTR

Place of Origin:original

... - High Performance Memory Chip Capacity Product Listing: Product Name: FM25V01A-GTR Integrated Circuit IC Chip Product Features: - Low-power serial F-RAM nonvolatile memory - 256 Kbit (32 Kbyte) of nonvolatile memory - Fast random read access: 20 ns - Low...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Anterwell

Model Number:M29W640FB

Place of Origin:original factory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7

Brand Name:Original Factory

Model Number:CYEL15B102Q-SXM

Place of Origin:CN

... organized as 262,144 × 8 bits and is accessed using an industry-standard serial peripheral interface (SPI) bus. The functional operation of the F-RAM is similar to serial flash and serial EEPROMs. The major difference between the CYEL15B102Q-SXM and a

Place of Origin:PHILIPPINE

Brand Name:Qimonda AG

Model Number:HYB25DC512160DE-5

Quick Detail: 512-Mbit Double-Data-Rate SDRAM Description: The 512-Mbit Double-Data-Rate SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512-Mbit Double-Data-Rate ...

Brand Name:Original Factory

Model Number:MT53E768M32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E768M32D2NP-046 WT:B 24 Gbit LPDDR4 Memory IC Surface Mount Product Description Of MT53E768M32D2NP-046 WT:B MT53E768M32D2NP-046 WT:B 24Gb Low power DDR4 SDRAM (LPDDR4) is a high speed CMOS dynamic random access storage device. The memory device is optimized to solve power consumption problems in battery-powered applications. LPDDR4 memory...

Brand Name:Infineon / CYPRESS

Model Number:FM28V020-SG

Place of Origin:original

...Memory Chips 28-SOIC Package F-RAM Memory Advanced High Reliability​ Memory Type Non-Volatile Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 256Kbit Memory Organization 32K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 140ns Access...

Brand Name:Macronix

Model Number:MX30LF1G08AA-TI

Place of Origin:original

.... It features a 100-pin TSOP2 package, a 3V voltage level, and a wide range of read, program, and erase functions. The device has a random access time of 90ns, a data retention period of 10 years, and a write endurance of up to 100K cycles. The