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pulse width modulation ic

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Total 10006 products from pulse width modulation ic Manufactures & Suppliers
Wholesale IGBT Power Module MG15H6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15H6EL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG15J6ES40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15J6ES40

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG15N6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15N6ES40

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG15N6ES42 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15N6ES42

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG15Q6ES1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15Q6ES1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG15Q6ES40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG15Q6ES40

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG20G6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG20G6EL1

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

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Wholesale IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG20G6EL2

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

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Wholesale IGBT Power Module MG20G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG20Q6EK1

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

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Wholesale IGBT Power Module MG25J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG25J2YS40

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG30D6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30D6EL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30D6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G1BL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G1BL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G1BL2

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 300A) trr = 0.15µs (max) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G1BL3- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G1BL3

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G2CL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G2CL1

... impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G2CL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G2CL2

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G2CL3 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G2CL3

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G2YM1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G2YM1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G6EL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G6EL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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Wholesale IGBT Power Module MG30G6EL2 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG30G6EL2

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (Max.) (IC = 300A) trr = 0.15µs (Max.) (IF = 300A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max.) (IC = 300A) Specifications: part no.

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