programmable read only memory

Brand Name:Winbond Electronics

Model Number:W949D6DBHX5I

Place of Origin:original

... and reliability for storing digital data. They are made with a high-grade plastic material and are capable of storing up to 2GB of data. These chips provide a fast read and write speed and are resistant to shocks and vibrations. They also

Brand Name:Intel

Model Number:EPC1PC8

Place of Origin:original

...Memory Chips EPC1PC8 – Up to 45 MB s Transfer Rate EPC1PC8 Flash Memory Chips Product Description: The EPC1PC8 Flash Memory Chips are designed for high-performance applications and feature a wide range of features and capacities. The chips are designed to be compatible with most mainstream applications and are designed for long-term use. Features include fast read...

Brand Name:Original Factory

Model Number:CY15B102QN-50LHXI

Place of Origin:CN

...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI Clock Frequency 50 MHz Access Time 8 ...

Brand Name:Original Factory

Model Number:S25FL064LABMFV010

Place of Origin:CN

..., the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. Specification Of S25FL064LABMFV010 Part Number S25FL064LABMFV010 Memory Interface SPI -

Brand Name:Original Factory

Model Number:MT25QL256ABA8E12-0AAT

Place of Origin:CN

... and then continuously clock data out from the device throughout the entire memory array. Specification Of MT25QL256ABA8E12-0AAT Part Number: MT25QL256ABA8E12-0AAT Stacked Device: Two 512Mb Die Voltage: 2.7–3.6V Interface: SPI ...

Brand Name:Original Factory

Model Number:MT29F4G08ABAFAH4-IT:F

Place of Origin:CN

... a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G08ABAFAH4-IT:F Part Number: MT29F4G08ABAFAH4-IT:F Memory Interface: Parallel Random read: 25µs Page program: 300µs (TYP) Erase Block: 2ms (TYP)

Brand Name:Original Factory

Model Number:MT35XU256ABA1G12-0AAT

Place of Origin:CN

...Memory Chip​ Product Description Of MT35XU256ABA1G12-0AAT MT35XU256ABA1G12-0AAT is Xccela™ Flash Memory Chip, Nonvolatile and volatile configuration registers enable respective default and temporary settings such as READ operation dummy clock cycles and wrap modes, memory...

Brand Name:Original Factory

Model Number:MT25QU01GBBB8E12-0AAT

Place of Origin:CN

...Memory Chip​ Product Description Of MT25QU01GBBB8E12-0AAT MT25QU01GBBB8E12-0AAT is 1Gbit Serial NOR Flash Memory Chip, high-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Specification Of MT25QU01GBBB8E12-0AAT Part Number: MT25QU01GBBB8E12-0AAT Series: MT25QU Product Category: NOR Flash Memory

Brand Name:Original Factory

Model Number:MT25QL512ABB8ESF-0SIT

Place of Origin:CN

...use, and is a simple solution for applications that code shadow; simply provide a starting address in the memory to read and then continuously clock data out from the device throughout the entire memory array. Specification Of MT25QL512ABB8ESF-0SIT Part

Brand Name:Original Factory

Model Number:MT29F2G08ABBEAH4-AITX:E

Place of Origin:CN

...Memory IC, it can store 1-bit of data per memory cell with fast read and write capabilities. Specification Of MT29F2G08ABBEAH4-AITX:E Part Number: MT29F2G08ABBEAH4-AITX:E Timing Type: Asynchronous Supply Voltage - Max: 1.95 V ...

Brand Name:Original Factory

Model Number:MT29F8T08EWLEEM5-R:E

Place of Origin:CN

...Memory IC MT29F8T08EWLEEM5-R:E Integrated Circuit Chip Product Description Of MT29F8T08EWLEEM5-R:E MT29F8T08EWLEEM5-R:E's READ, PROGRAM, and ERASE commands can be aborted while the device is in the busy state. The contents of the memory location being programmed or the block being erased are no longer valid. Specification Of MT29F8T08EWLEEM5-R:E Part Number MT29F8T08EWLEEM5-R:E Memory...

Brand Name:Original Factory

Model Number:IS22TF08G-JCLA2

Place of Origin:CN

...Memory IC​ Product Description Of IS22TF08G-JCLA2 IS22TF08G-JCLA2 is 8GB eMMC Memory Chip With eMMC 5.1 Interface and pSLC Mode NAND. Specification Of IS22TF08G-JCLA2 Part Number: IS22TF08G-JCLA2 Package / Case: FBGA-153 Memory Size: 8 GB Configuration: TLC Sequential Read...

Brand Name:Original Factory

Model Number:IS22TF32G-JQLA1

Place of Origin:CN

...Memory Chip 200MHz Integrated Circuit Chip​ Product Description Of IS22TF32G-JQLA1 IS22TF32G-JQLA1 The controller directly manages the NAND flash, implementing functions like bad block management, error handling (ECC), static and dynamic wear-leveling, IOPS optimization and read sensing. Specification Of IS22TF32G-JQLA1 Part Number IS22TF32G-JQLA1 Technology FLASH - NAND (TLC) Memory Size 256Gbit Memory

Brand Name:Original Factory

Model Number:IS22TF16G-JCLA2

Place of Origin:CN

...Memory IC 153-VFBGA IC Chips​ Product Description Of IS22TF16G-JCLA2 IS22TF16G-JCLA2 eMMC integrates NAND Flash memory and an intelligent eMMC controller inside one JEDEC standard package, providing a standard interface to the host. Specification Of IS22TF16G-JCLA2 Part Number: IS22TF16G-JCLA2 Memory Size: 16 GB Configuration: TLC Sequential Read...

Brand Name:Original Factory

Model Number:THGBMUG7C1LBAIL

Place of Origin:CN

... to need e-MMC as an embedded memory solution. Specification Of THGBMUG7C1LBAIL Part Number THGBMUG7C1LBAIL Memory Size: 16 GB Sequential Read: 400 MB/s Supply Voltage - Min: 2.7 V Supply Voltage - Max: 3.6 V Applications Of THGBMUG7C1LBAIL Tablets/2

Brand Name:Original Factory

Model Number:THGAMVG8T13BAIL

Place of Origin:CN

...Memory IC THGAMVG8T13BAIL Integrated Circuit Chip Product Description Of THGAMVG8T13BAIL THGAMVG8T13BAIL e-MMC™ NAND Flash Memory implements Bit Column Stacked (BiCS) FLASH™ 3D technology. Specification Of THGAMVG8T13BAIL Part Number THGAMVG8T13BAIL Sequential Read: 400 MB/s Maximum Operating Temperature: + 85 C Moisture Sensitive: Yes Features Of THGAMVG8T13BAIL 16GB to 128GB memory...

Brand Name:CYPRESS

Model Number:FM25CL64B-GTR

Place of Origin:Original Factory In stock

... random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems ...

Brand Name:Original Factory

Model Number:CYEL18V2562-200BKXE

Place of Origin:CN

... uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the

Brand Name:Original Factory

Model Number:CYEL18V2563-200BKXE

Place of Origin:CN

... uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the

Brand Name:ALTERA

Model Number:EPC2TC32

... Industrial Designs Standard Package 250 Category Integrated Circuits (ICs) Family Memory - Configuration Proms for FPGA's Series EPC Packaging Tray Programmable Type In System Programmable Memory Size 1.6Mb Voltage - Supply 3 V ~ 3.6 V, 4.75 V ~ 5.25 V