power mosfet module

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:Original Factory

Model Number:MSCSM120SKM11CT3AG

Place of Origin:CN

...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number MSCSM120SKM11CT3AG Product: Power MOSFET Modules Type: Buck Chopper Technology: SiC Vf - Forward Voltage: 1.5

Place of Origin:America

Brand Name:IXYS

Model Number:VMK165-007T

...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:Infineon Technologies

Model Number:BSC0901NSATMA1

Place of Origin:Multi-origin

... delivery. Built with silicon-on-insulator (SOI) technology, it is ideal for applications such as motor control, digital power, switching power supplies, and solar cell inverters. It offers low gate charge, low on-resistance, high frequency operation, and

Model Number:IXFN39N90

Brand Name:Original

Place of Origin:US

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V Power...

Model Number:FM50DY-10

Place of Origin:Guangdong, China

Brand Name:KAIGENG

FM50DY-10 Module Electronic Components IC MCU Microcontroller Integrated Circuits FM50DY-10 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA1032CZ

...Power MOSFET FDMA1032CZ 20V Complementary PowerTrench^® MOSFET High Power MOSFET FDMA1032CZ 20V Complementary PowerTrench® MOSFET [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module...

Brand Name:Mersen

Model Number:NH1GG69V250P

Place of Origin:China

... gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most

Model Number:DC-DC SX1308

Place of Origin:Guangdong, China

Brand Name:Creatall

...Power Supply Module Product Description: LC SX1308 booster module carrying SX1308 chip, its packagnig is small, and high efficiency. The output power can be adjust, maximum can arrive 28V and its interior integrate the lowest RDS internal resistance 100mΩ metal oxide semiconductor field effect transistor (mosfet...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Place of Origin:CHINA

Brand Name:EST

Model Number:100W-850MHz

...Power Amplifier Module 10A Working Current 55dBm Gain Product Description: This Power Amplifier Module is a 100W Blocking Power Amplifier Module designed for High Power RF Jamming. It has a module size of 200×90×24mm and a working frequency range of 20MHz~2700MHz. With a maximum working current of 10A and a gain of 55dBm, this module can provide an output power of up to 50dBm. Features: Product Name: Power Amplifier Module Module...

Brand Name:Honeywell

Model Number:620-0036

Place of Origin:USA

...-63Hz OTHER SUPERIOR PRODUCTS Yasakawa Motor, Driver SG- Mitsubishi Motor HC-,HA- Westinghouse Modules 1C-,5X- Emerson VE-,KJ- Honeywell TC-,TK- GE Modules IC - ABB Module AB Module 1756-,1759- Tourch Screen 2711- Mitsubishi Drive MR- ,

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:VBE

Place of Origin:CHINA

...Power Amplifier Module SMA-F 28V 100g with signal source built-in, RF Jamming module Product Description: RF Power Amplifier Module is a high-performance RF power amplifier with built-in VCO, integrating a high-power module and harmonic suppression, low noise figure, compact size and low spurious suppression. It is designed for applications requiring high power output and excellent linearity. This RF Power Amplifier Module...

Place of Origin:China

Brand Name:OEM

...-40°C. 2.This document stipulates the radio frequency and monitoring technical indicators of the 1.2G 50W power amplifier module, the definition of each port of the module, the appearance and structure of the module, etc. 3.This document applies to all