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microcontroller ic power switch

All microcontroller ic power switch wholesalers & microcontroller ic power switch manufacturers come from members. We doesn't provide microcontroller ic power switch products or service, please contact them directly and verify their companies info carefully.

Total 10000 products from microcontroller ic power switch Manufactures & Suppliers
Wholesale IGBT Power Module MG75J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS50

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

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Wholesale IGBT Power Module MG75J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS91

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

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Wholesale IGBT Power Module MG75J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J6EL1

...Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 75A) trr = 0.15µs (Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

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Wholesale IGBT Power Module MG100J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG100J2YS50

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) [1]Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Specifications: part no.

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Wholesale IGBT Power Module MG150G2YL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150G2YL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H1FL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2CK1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2DL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150H2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2YL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2YS1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1BS11

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1JS50

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1JS51

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1ZS50

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no.

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Wholesale IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1ZS51

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no.

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Wholesale IGBT Power Module MG150J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J2YS40

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

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Wholesale IGBT Power Module MG150J7KS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J7KS50

... [1] 7 IGBTs built into 1 package. [1] Enhancement-mode [1] High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A) : tf = 0.5µs (max) (@IC = 150A) : trr = 0.3µs (max) (@IF = 150A) [1] Outline : TOSHIBA 2-110A1B [1]

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Wholesale IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG200H1AL1

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no.

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Wholesale IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG200H1FL1

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 200A) Specifications: part no.

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Wholesale IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG200H1FL1A

...Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

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