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Brand Name:Original Factory

Model Number:MT62F1G64D4EK-023 AIT:B

Place of Origin:CN

Memory IC Chip MT62F1G64D4EK-023 AIT:B 64Gbit Parallel LPDDR5 Memory IC TFBGA-441​ Product Description Of MT62F1G64D4EK-023 AIT:B MT62F1G64D4EK-023 AIT:B is 64Gbit Parallel SDRAM - Mobile LPDDR5 Memory IC. Advanced 1y nanometer node in 64GB capacity and at a data speed of 6.4Gbps improves overall DRAM design. Specification Of MT62F1G64D4EK-023 AIT:B Memory Format DRAM Technology SDRAM - Mobile LPDDR5 Memory Size 64Gbit Memory...

Brand Name:Original Factory

Model Number:MT62F1G64D4EK-023 AUT:B

Place of Origin:CN

... SDRAM Memory Chip for Mobile Devices and Artificial Intelligence (AI). Specification Of MT62F1G64D4EK-023 AUT:B Technology SDRAM - Mobile LPDDR5 Memory Size 64Gbit Memory Organization 1G x 64 Memory Interface Parallel Clock Frequency 4.266 GHz Voltage -

Brand Name:Original Factory

Model Number:MT53E256M32D2FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2FW-046 WT:B 8Gbit Parallel LPDDR4X Memory IC VFBGA-200​ Product Description Of MT53E256M32D2FW-046 WT:B MT53E256M32D2FW-046 WT:B is 8Gbit Parallel SDRAM - Mobile LPDDR4X Memory IC. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M32D2FW-046 WT:B Memory Type Volatile Memory

Brand Name:Original Factory

Model Number:MT53E128M32D2FW-046 AUT:A

Place of Origin:CN

Memory IC Chip MT53E128M32D2FW-046 AUT:A 4Gbit Parallel 2.133 GHz 3.5 ns LPDDR4 Memory Product Description Of MT53E128M32D2FW-046 AUT:A MT53E128M32D2FW-046 AUT:A LPDDR4 memory is optimized to address power consumption in battery-powered applications. The peak bandwidth of these memory devices is 33% faster than DDR4. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is reduced to 1/5. These memory...

Brand Name:Original Factory

Model Number:MT53E1536M32D4DE-046 WT:B

Place of Origin:CN

... random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory is suitable for

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT29F4T08GMLCEJ4:C

Place of Origin:CN

Memory IC Chip MT29F4T08GMLCEJ4:C Memory Chip 4Tbit NAND Flash Memory IC​ Product Description Of MT29F4T08GMLCEJ4:C MT29F4T08GMLCEJ4:C is 4Tbit NAND Flash Memory Chip. Multilevel cell (MLC) NAND is popular for higher-density storage like SSDs, tablets, smart phones, and other wireless devices. Specification Of MT29F4T08GMLCEJ4:C Part Number: MT29F4T08GMLCEJ4:C Memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2FW-046 IT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2FW-046 IT:B 8Gbit Parallel SDRAM Mobile LPDDR4X Memory Product Description Of MT53E256M32D2FW-046 IT:B MT53E256M32D2FW-046 IT:B memory optimization is designed to address power consumption issues in battery-powered applications, making it ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of MT53E256M32D2FW-046 IT:B Memory Size 8Gbit Memory Organization 256M x 32 Memory

Brand Name:Original Factory

Model Number:MT53E512M32D2FW-046 AAT:D

Place of Origin:CN

Memory IC Chip MT53E512M32D2FW-046 AAT:D 16Gbit Parallel Memory IC VFBGA-200 Product Description Of MT53E512M32D2FW-046 AAT:D MT53E512M32D2FW-046 AAT:D is a high-speedCMOS, dynamic random-access memory. The device is internally configured with x16I/O, 8-banks. Specification Of MT53E512M32D2FW-046 AAT:D Memory Size 16Gbit Memory Organization 512M x 32 Memory...

Brand Name:Original Factory

Model Number:MT40A512M16LY-062E AIT:E

Place of Origin:CN

Memory IC Chip MT40A512M16LY-062E AIT:E 1.6GHz 8Gbit Parallel Memory IC FBGA-96 Product Description Of MT40A512M16LY-062E AIT:E MT40A512M16LY-062E AIT:E is a high-speed dynamic random access memory that is internally configured with 8 groups of DRAM (for x16 configurations) and 16 groups of DRAM (for x4 and x8 configurations). Specification Of MT40A512M16LY-062E AIT:E Memory Size 8Gbit Memory Organization 512M x 16 Memory...

Brand Name:Original Factory

Model Number:MT53E128M16D1DS-053 AAT:A

Place of Origin:CN

Memory IC Chip MT53E128M16D1DS-053 AAT:A 2Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E128M16D1DS-053 AAT:A MT53E128M16D1DS-053 AAT:A LPDDR4 Memory is optimized to address power consumption issues in battery operated applications. The LPDDR4 Memory combines performance, power, latency, and physical space that makes it energy-efficient. Specification Of MT53E128M16D1DS-053 AAT:A Memory Type Volatile Memory...

Brand Name:Original Factory

Model Number:MT29F2T08EMLEEJ4-M:E

Place of Origin:CN

Memory IC Chip MT29F2T08EMLEEJ4-M:E Memory Chip 2Tbit NAND Flash Data Storage IC​ Product Description Of MT29F2T08EMLEEJ4-M:E MT29F2T08EMLEEJ4-M:E is 2Tbit NAND Flash Memory Chip, 8bit Data Bus Width, package is VBGA. Specification Of MT29F2T08EMLEEJ4-M:E Part Number: MT29F2T08EMLEEJ4-M:E Memory Size: 2 Tbit Memory Organization: 256 G X 8 Mounting Style: Surface Mount Data Bus Width: 8 Bit Product Type: NAND Flash Memory...

Brand Name:Original Factory

Model Number:MT29F4T08EULEEM4-M:E

Place of Origin:CN

Memory IC Chip MT29F4T08EULEEM4-M:E 2.5V Data Storage IC 4Tbit NAND Flash Memory Product Description Of MT29F4T08EULEEM4-M:E MT29F4T08EULEEM4-M:E is 2.5V, 4Tbit NAND Flash Memory Chip, Mass Storage B47R, package is LBGA. Specification Of MT29F4T08EULEEM4-M:E Part Number: MT29F4T08EULEEM4-M:E Memory Size: 4 Tbit Memory Organization: 512G X 8 Package: LBGA Mounting Style: SMD/SMT Type: Higher Density NAND Flash Memory...

Brand Name:Original Factory

Model Number:TH58NVG2S3HAI0

Place of Origin:CN

Memory IC Chip TH58NVG2S3HAI0 4Gbit SLC NAND Flash Memory IC TSOP-48 Product Description Of TH58NVG2S3HAI0 SLC NAND advanced flash memory products provide cutting-edge endurance and data retention for sensitive or frequently used system data. For long-lasting products or systems working with extremely high data throughput between the host and the memory, SLC is a suitable solution. Specification Of TH58NVG2S3HAI0 Memory Size 4Gbit Memory

Brand Name:Original Factory

Model Number:M321R8GA0PB0-CWM

Place of Origin:CN

M321R8GA0PB0-CWM Memory IC Chip BGA-288 Dual-Row In-Line Memory Module With Memory​ Product Description Of M321R8GA0PB0-CWM M321R8GA0PB0-CWM is a dual in-line memory module with memory in a 288-PIN package for high-performance applications such as servers...

Brand Name:Original Factory

Model Number:CY62167G30-45ZXI

Place of Origin:CN

...Memory IC Chip 16Mbit Paralle Asynchronous SRAM Memory IC TSOP-48​ Product Description Of CY62167G30-45ZXI CY62167G30-45ZXI is a high performance CMOS Low Power (MoBL®) SRAM devices. The device supports single- and dual-chip enable options and multiple pin configurations. Specification Of CY62167G30-45ZXI Series MOBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 16Mbit Memory...

Brand Name:Original Factory

Model Number:MT61K512M32KPA-14C:B

Place of Origin:CN

...Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory Product Description Of MT61K512M32KPA-14C:B MT61K512M32KPA-14C:B GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory...

Brand Name:Original Factory

Model Number:AT45DB081E-SHN-T

Place of Origin:CN

... with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. AT45DB081E-SHN-T also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:S25FS512SAGBHM210

S25FS512SAGBHM210 Memory IC Chip Memories TBGA24 FS-S Series Memory NOR Flash Memory IC [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + ...

Brand Name:Original Factory

Model Number:CAT25M02VI-GT3

Place of Origin:CN

...Memory IC Chip 2Mbit EEPROM Serial Memory IC With SPI Interface​ Product Description Of CAT25M02VI-GT3 CAT25M02VI-GT3 is a EEPROM Serial 2−Mb SPI device internally organized as 256Kx8 bits. CAT25M02VI-GT3 features a 256−byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. Specification Of CAT25M02VI-GT3 Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 2Mbit Memory...