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Brand Name:Winbond Electronics

Model Number:W631GG8KB-15

Place of Origin:original

W631GG8KB-15 Flash Memory Chip High Performance for Durable Storage Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3 Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface Parallel Clock Frequency 667 MHz Write Cycle Time - Word, ...

Brand Name:Micron Technology Inc.

Model Number:MT47H64M16HR-25E IT:H

Place of Origin:original

MT47H64M16HR-25E IT:H Flash Memory Chip High Performance Of Storage Capacity​ Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 1Gbit Memory Organization 64M x 16 Memory Interface Parallel Clock Frequency 400 MHz Write Cycle ...

Brand Name:Micron

Model Number:MT25QU01GBBB8E12-0AAT

Place of Origin:original

MT25QU01GBBB8E12-0AAT 24-TBGA Flash Memory Chips High Performance High Density Non-Volatile Storage Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface SPI Clock Frequency 133 ...

Brand Name:Winbond

Model Number:W25Q64JVSSIQ

Place of Origin:original

W25Q64JVSSIQ 8-SOIC Flash Memory Chip - High Performance Low Power Consumption Durable Storage Solution Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 64Mbit Memory Organization 8M x 8 Memory Interface SPI - Quad I/O Clock ...

Brand Name:Infineon / CYPRESS

Model Number:S25FL127SABMFI103

Place of Origin:original

S25FL127SABMFI103 Flash Memory Chips 8-SOIC Package Multi Command Set And Footprint Compatible Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 128Mbit Memory Organization 16M x 8 Memory Interface SPI - Quad I/O Clock ...

Brand Name:Original Factory

Model Number:CY15B108QI-20LPXC

Place of Origin:CN

...Memory IC Product Description Of CY15B108QI-20LPXC CY15B108QI-20LPXC is a low-power, 8-Mbit nonvolatile memory employing an advanced ferroelectric process. Specification Of CY15B108QI-20LPXC Part Number CY15B108QI-20LPXC Memory Format FRAM Technology FRAM (Ferroelectric RAM) Memory Size 8Mbit Memory Organization 1M x 8 Memory...

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Brand Name:Original Factory

Model Number:S70KL1283GABHV020

Place of Origin:CN

Memory IC Chip S70KL1283GABHV020 128Mbit Pseudo SRAM Memory IC 24-FBGA IC Chips​ Product Description Of S70KL1283GABHV020 S70KL1283GABHV020 is 128 Mb HYPERRAM™ self-refresh DRAM (PSRAM), 3.0 V Industrial (105°C) xSPI (Octal) HYPERRAM Gen 2.0 in 24-FBGA. Specification Of S70KL1283GABHV020 Part Number S70KL1283GABHV020 Memory Type Volatile Technology PSRAM (Pseudo SRAM) Memory Organization 16M x 8 Memory...

Brand Name:Original Factory

Model Number:S27KS0642GABHM023

Place of Origin:CN

...Memory IC 24-VBGA Product Description Of S27KS0642GABHM023 S27KS0642GABHM023 Memory is a high-speed, low-pin-count, low-power self-refresh Dynamic RAM (DRAM) for high-performance embedded systems requiring expansion memory for scratchpad or buffering purposes. Specification Of S27KS0642GABHM023 Part Number S27KS0642GABHM023 Memory Size 64Mbit Memory Organization 8M x 8 Memory...

Brand Name:Original Factory

Model Number:MT29F2G16ABAGAWP-AAT:G

Place of Origin:CN

...Memory IC MT29F2G16ABAGAWP-AAT:G Integrated Circuit Chip 2Gbit Parallel​ Product Description Of MT29F2G16ABAGAWP-AAT:G MT29F2G16ABAGAWP-AAT:G is NAND Flash SLC 2Gbit Parallel Memory IC, Memory Organization is 128M x 16. Specification Of MT29F2G16ABAGAWP-AAT:G Part Number: MT29F2G16ABAGAWP-AAT:G Memory Type: Non-Volatile Memory Interface: Parallel Operating Temperature(Min): -40°C (TA) Operating Temperature(Max): 105°C (TA) Memory

Brand Name:Original Factory

Model Number:MT29F2T08EMLEEJ4-T:E

Place of Origin:CN

...Memory IC Product Description Of MT29F2T08EMLEEJ4-T:E MT29F2T08EMLEEJ4-T:E is programmed and read using page-based operations and is erased using block-based operations. Specification Of MT29F2T08EMLEEJ4-T:E Part Number MT29F2T08EMLEEJ4-T:E Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (TLC) Memory Size 2Tbit Memory Organization 256G x 8 Memory...

Brand Name:Original Factory

Model Number:THGBMJG9C8LBAU8

Place of Origin:CN

...Memory IC THGBMJG9C8LBAU8 Integrated Circuit Chip Product Description Of THGBMJG9C8LBAU8 THGBMJG9C8LBAU8 eMMC flash memory is fully compliant with the Multimedia Card Association (MMCA) high-speed memory interface standard. Specification Of THGBMJG9C8LBAU8 Part Number THGBMJG9C8LBAU8 Technology FLASH - NAND Memory Size 512Gbit Memory Organization 64G x 8 Memory...

Brand Name:Original Factory

Model Number:THGBMJG7C2LBAU8

Place of Origin:CN

... correction code, bad block management, wear-levelling, and garbage collection. Specification Of THGBMJG7C2LBAU8 Part Number THGBMJG7C2LBAU8 Memory Size 128Gbit Memory Organization 16G x 8 Memory Interface eMMC Operating Temperature -40°C ~ 105°C (TA)

Brand Name:Alliance Memory, Inc.

Model Number:AS4C64M8D2-25BIN

...Memory, Inc. Product Category Memory ICs Series - Packaging Tray Alternate Packaging Package-Case 60-TFBGA Operating-Temperature -40°C ~ 85°C (TA) Interface Parallel Voltage-Supply 1.7 V ~ 1.9 V Supplier-Device-Package 60-FBGA (8x10) Memory Capacity 512M (64M x 8) Memory-Type DDR2 SDRAM Speed 400MHz Format-Memory RAM Descriptions SDRAM - DDR2 Memory...

Brand Name:Alliance Memory, Inc.

Model Number:AS4C4M32S-7BCN

...Memory, Inc. Product Category Memory ICs Series - Packaging Tray Alternate Packaging Package-Case 90-LFBGA Operating-Temperature 0°C ~ 70°C (TA) Interface Parallel Voltage-Supply 3 V ~ 3.6 V Supplier-Device-Package 90-TFBGA (8x13) Memory Capacity 128M (4M x 32) Memory-Type SDRAM Speed 143MHz Format-Memory RAM Descriptions SDRAM Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AAT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AAT:B 8Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E256M32D2DS-046 AAT:B MT53E256M32D2DS-046 AAT:B LPDDR4 Memory optimized to solve power consumption problems in battery-powered applications. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AIT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AIT:B SDRAM Mobile LPDDR4 Memory 200-WFBGA Product Description Of MT53E256M32D2DS-046 AIT:B MT53E256M32D2DS-046 AIT:B is optimized to address power consumption in battery-powered applications. The peak bandwidth of these memory devices is 33% faster than DDR4. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is reduced to 1/5. These memory...

Brand Name:Original Factory

Model Number:MT53E1G32D2NP-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E1G32D2NP-046 WT:B 32Gbit 2.133 GHz Mobile LPDDR4 Memory Product Description Of MT53E1G32D2NP-046 WT:B MT53E1G32D2NP-046 WT:B 32Gb Low Power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access storage device optimized to solve power consumption problems in battery-powered applications. Specification Of MT53E1G32D2NP-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...