memory ic programmer

Brand Name:OEM/ODM

Place of Origin:China

Model Number:MT47H64M16HR-3 AAT:H TR

... voltage of 2.7V to 5.5V, memory of 256B to 64KB, 2KV HBM ESD Protection, operating frequency from DC to 20MHz, and programming time from 10ms to 10s. It provides users with the flexibility and convenience of programming their own IC chip to meet their

Brand Name:Original Factory

Model Number:MTFC32GAZAQHD-WT

Place of Origin:CN

... form-factor applicationseets IoT, automotive and emerging embedded application demands. Specification Of MTFC32GAZAQHD-WT Part Number MTFC32GAZAQHD-WT Memory Size 256Gbit Memory Organization 32G x 8 Memory Interface MMC Clock Frequency 200 MHz Features Of

Brand Name:Original Factory

Model Number:S70KS1282GABHA023

Place of Origin:CN

Memory IC Chip S70KS1282GABHA023 200MHz Pseudo SRAM Memory IC 24-FBGA​ Product Description Of S70KS1282GABHA023 S70KS1282GABHA023 The DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM (PSRAM). Specification Of S70KS1282GABHA023 Part Number S70KS1282GABHA023 Density 128 MBit Family KS-2 Initial Access Time 35 ns Memory

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E256M32D2DS-046 AAT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2DS-046 AAT:B 8Gbit SDRAM Mobile LPDDR4 Memory IC Product Description Of MT53E256M32D2DS-046 AAT:B MT53E256M32D2DS-046 AAT:B LPDDR4 Memory optimized to solve power consumption problems in battery-powered applications. The memory device uses multi-chip package (MCP) and package stack (PoP) design to save PCB space. LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E1G64D4NW-046 WT:C

Place of Origin:CN

Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory...

Brand Name:Original Factory

Model Number:MT53E256M32D1KS-046 AIT:L

Place of Origin:CN

... mode is reduced to 1/5. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E256M32D1KS-046 WT:L

Place of Origin:CN

...-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. LPDDR4 memory devices are ideal for handheld devices, battery-powered applications, and

Brand Name:Original Factory

Model Number:MT53E512M32D1ZW-046BWT:B

Place of Origin:CN

... a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating ...

Brand Name:Original Factory

Model Number:MT29F2G08ABAEAH4-IT:E

Place of Origin:CN

...Memory IC Chip 2Gbit Parallel NAND Flash Memory Chip VFBGA63 Product Description Of MT29F2G08ABAEAH4-IT:E MT29F2G08ABAEAH4-IT:E is a 2Gbit Parallel, NAND Flash Memory IC , the package is 63-VFBGA (9x11). Specification Of MT29F2G08ABAEAH4-IT:E Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND Memory Size 2Gbit Memory Organization 256M x 8 Memory...

Brand Name:Original Factory

Model Number:MX30LF2G18AC-XKI

Place of Origin:CN

... Memory IC. Specification Of MX30LF2G18AC-XKI Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NAND (SLC) Memory Size 2Gbit Memory Organization 256M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 20ns Access Time 20 ns Voltage -

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-093 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory​ Product Description Of MT52L256M32D1PF-093 WT:B MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-093 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Intel

Place of Origin:China, GuangDong, ShenZhen

Model Number:PC28F00AG18FE

Product Description: PC28F00AG18FE Integrated Circuits ICs , 133MHz Memory ICs 64-TBGA Electronic IC Chips are programmable IC chips and common IC chips, which are widely used in electronic components and other applications. They are designed with ...

Brand Name:Kioxia America, Inc.

Model Number:THGAMVG7T13BAIL

Place of Origin:USA

...IC FLASH 128GBIT EMMC 153FBGA Memory IC Tray The THGAM eMMC flash memory feature integrated memory management with error correction code, bad block management, wear-levelling, and garbage collection. These flash memories come in a FBGA package and standard (-25°C to +85°C) temperature version. Typical applications include consumer electronics, multimedia, smart metering, and intelligent lighting. FEATURES 16GB to 128GB memory...

Brand Name:Original Factory

Model Number:MT40A1G16KD-062E IT:E

Place of Origin:CN

... DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. Specification Of MT40A1G16KD-062E IT:E Part Number MT40A1G16KD-062E IT:E Memory Interface Parallel Clock Frequency 1.6 GHz Write Cycle Time -

Brand Name:Original Factory

Model Number:MT41K64M16TW-107 AUT:J

Place of Origin:CN

... data sheet specifications when running in 1.5V compatible mode. Specification Of MT41K64M16TW-107 AUT:J Part Number MT41K64M16TW-107 AUT:J Memory Type Volatile Memory Format DRAM Technology SDRAM -

Brand Name:Original Factory

Model Number:S25FL064LABMFM013

Place of Origin:CN

IC Chips S25FL064LABMFM013 FLASH NOR Memory IC 8-SOIC 64Mbit Memory Chips 108MHz​ Product Description Of S25FL064LABMFM013 S25FL064LABMFM013 The architecture features a page programming buffer that allows up to 256 bytes to be programmed in one operation and provides individual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase. Specification Of S25FL064LABMFM013 Part Number S25FL064LABMFM013 Memory Size 64Mbit Memory