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Ics Triplex Power Module Controller

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ics triplex power module controller

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Total 28142 products from ics triplex power module controller Manufactures & Suppliers
Wholesale IGBT Power Module MG75J1ZS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J1ZS40

...High input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J1ZS41- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J1ZS41

...High input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J1ZS50

...High input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf= 0.30µs (max) (IC = 75A) trr = 0.15µs (max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J2YS9 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS9

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS40

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS50

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J2YS91 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J2YS91

...High input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG75J6EL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG75J6EL1

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]The electrodes are isolated from case. [1]High input impedance. [1]6 IGBTs built into 1 package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 75A) trr = 0.15µs (Max) (IF = 75A) [1]Low saturation voltage : VCE (sat) = 2.70V (Max) (IC...

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG100J2YS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG100J2YS50

... input impedance. [1]Includes a complete half bridge in one package. [1]Enhancement-mode. [1]High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) [1]Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150G2YL1- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150G2YL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H1FL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2CK1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150H2DL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2DL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150H2YL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2YL1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150H2YS1

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1BS11

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1JS50

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1JS51

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) = 2.70 V (max) (IC = 150 A) Specifications: part

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1ZS50

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no.

Mega Source Elec.Limited
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Wholesale IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT from china suppliers

Place of Origin:PHILIPPINE

Brand Name:TOSHIBA

Model Number:MG150J1ZS51

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2.70V (max) (IC = 150A) Specifications: part no.

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