ic memory

Brand Name:Original Factory

Model Number:H9HCNNN8KUMLHR-NME

Place of Origin:CN

... package. Specifications Of H9HCNNN8KUML-HRNME Memory Size:8Gb Memory Organization:256M x 32 Package:BGA-200 Voltage - Supply:1.1V(VDD2,VDDCA,VDDQ) Control signal supply ...

Brand Name:Original Factory

Model Number:CYEL18V5123-200BKXE

Place of Origin:CN

..., low-power, high bandwidth Pseudostatic RAM Memory Chip (pSRAM). It is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial ...

Brand Name:AMD

Model Number:XCF04S-VOG20

... (ICs) Memory Configuration Proms for FPGAs Mfr AMD Series - Package Tube Product Status Obsolete Programmable Type In System Programmable Memory Size 4Mb Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C Mounting Type Surface Mount Package /

Brand Name:Microchip Technology

Model Number:24LC256-I/P

Product Details Description: The 24LC256-I/P is a Microchip Technology Integrated Circuits (ICs) Memory ICs that is based on EEPROMs - Serial. It has an access time of 900 ns, a mounting style of Through Hole, and a package case of 8-DIP (0.300", 7.62mm...

Brand Name:Macronix

Model Number:MX25L3233FM2I-08G

Product Details Description: The MX25L3233FM2I-08G is an integrated circuit (IC) memory IC from MXIC. It is rated AEC-Q200 and is a wirewound type with a series of LQW18. It has a maximum height-seated of 0.039" (1.00mm) and is unshielded. It has a package...

Brand Name:Original brand

Model Number:KMV3W000LM-B310

Place of Origin:China

...Memory Chip IC KMV3W000LM-B310 For SMG Note2 N7100 eMMC 16GB Nand Flash Memory Chip IC KMV3W000LM-B310 Programmed with Firmware Data emmc chip ic Product Specifications Brand Name ALL BRAND Place of Origin United States United States Florida Manufacturer Part Number KMV3W000LM-B310 Type Voltage Regulator Description EMCP memory chip Applications ICS...

Brand Name:Original brand

Model Number:93LC66B-I/SN

Place of Origin:China

...IC Chips 4K Microwire Compatible Serial EEPROM Product Specifications Datasheets 93(AA,LC,C)66x Product Photos 8-SOIC PCN Design/Specification 8L SOIJ Package/Plating 28/Feb/2013 Standard Package 100 Category Integrated Circuits (ICs) Family Memory Series - Packaging Tube Format - Memory EEPROMs - Serial Memory Type EEPROM Memory...

Brand Name:Original brand

Model Number:AT45DB041B-TU

Place of Origin:China

...IC FLASH 4M SPI 20MHZ 28TSOP AT45DB041B-TU The AT45DB041B is an SPI compatible serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 4,325,376 bits of memory are organized as 2048 pages of 264 bytes each. In addition to the main memory...

Brand Name:STMicroelectronics

Model Number:M24128-BWMN6TP

Place of Origin:CHINA

... SOP8 EEPROM Memory IC 128Kb (16K x 8) I²C 1MHz 450ns Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 128Kb (16K x 8) Clock Frequency 1MHz Write Cycle Time - Word, Page 5ms Access Time 450ns Memory Interface I²C Voltage...

Brand Name:Original Factory

Model Number:S25FL512SAGBHBA10

Place of Origin:CN

...Memory IC 24-BGA IC Chips​ Product Description Of S25FL512SAGBHBA10 S25FL512SAGBHBA10 is FLASH - NOR Memory IC, 512Mbit SPI - Quad I/O, the package is 24-BGA (8x6). Specification Of S25FL512SAGBHBA10 Part Number: S25FL512SAGBHBA10 Mounting Style: SMD/SMT Memory...

Brand Name:Original Factory

Model Number:S70KL1282GABHB020

Place of Origin:CN

...IC Chips S70KL1282GABHB020 Pseudo SRAM Memory IC 24-FBGA Surface Mount​ Product Description Of S70KL1282GABHB020 S70KL1282GABHB020 is 128Mbit PSRAM (Pseudo SRAM) Memory IC, HYPERBUS™ interface, 1.8 V/3.0 V, package is 24-FBGA (6x8). Specification Of S70KL1282GABHB020 Part Number: S70KL1282GABHB020 Peak Reflow Temp: 260 °C Memory...

Brand Name:STMicroelectronics

Model Number:M24128-BWMN6TP

Place of Origin:CHINA

... SOP8 EEPROM Memory IC 128Kb (16K x 8) I²C 1MHz 450ns Memory Type Non-Volatile Memory Format EEPROM Technology EEPROM Memory Size 128Kb (16K x 8) Clock Frequency 1MHz Write Cycle Time - Word, Page 5ms Access Time 450ns Memory Interface I²C Voltage...

Brand Name:Original Factory

Model Number:S80KS5122GABHV023

Place of Origin:CN

...Memory Chip S80KS5122GABHV023 Integrated Circuit Chip 24FBGA Memory IC​ Product Description Of S80KS5122GABHV023 S80KS5122GABHV023 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Specification Of S80KS5122GABHV023 Part Number S80KS5122GABHV023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 512Mbit Memory...

Brand Name:Original Factory

Model Number:S80KS2562GABHA023

Place of Origin:CN

...Memory IC S80KS2562GABHA023 Integrated Circuit Chip 24-VBGA 256Mbit​ Product Description Of S80KS2562GABHA023 S80KS2562GABHA023 is 256Mbit HYPERRAM™ self-refresh dynamic RAM (DRAM) Memory Chip with HYPERBUS™ interface. Specification Of S80KS2562GABHA023 Part Number S80KS2562GABHA023 Memory Type Volatile Memory Format PSRAM Technology PSRAM (Pseudo SRAM) Memory Size 256Mbit Memory Organization 32M x 8 Memory...

Brand Name:Original Factory

Model Number:MT29F4G01ABBFDWB-IT:F

Place of Origin:CN

...Memory IC Chip 4Gbit NAND Flash Memory Chip UPDFN8​ Product Description Of MT29F4G01ABBFDWB-IT:F MT29F4G01ABBFDWB-IT:F is Multiplexed NAND Flash Memory, NAND technology provides a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G01ABBFDWB-IT:F Part Number MT29F4G01ABBFDWB-IT:F Technology FLASH - NAND (SLC) Memory Size 4Gbit Memory Organization 4G x 1 Memory...

Brand Name:Original Factory

Model Number:MT53E128M32D2FW-046 AUT:A

Place of Origin:CN

Memory IC Chip MT53E128M32D2FW-046 AUT:A 4Gbit Parallel 2.133 GHz 3.5 ns LPDDR4 Memory Product Description Of MT53E128M32D2FW-046 AUT:A MT53E128M32D2FW-046 AUT:A LPDDR4 memory is optimized to address power consumption in battery-powered applications. The peak bandwidth of these memory devices is 33% faster than DDR4. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is reduced to 1/5. These memory...

Brand Name:Original Factory

Model Number:MT53E256M32D2FW-046 IT:B

Place of Origin:CN

Memory IC Chip MT53E256M32D2FW-046 IT:B 8Gbit Parallel SDRAM Mobile LPDDR4X Memory Product Description Of MT53E256M32D2FW-046 IT:B MT53E256M32D2FW-046 IT:B memory optimization is designed to address power consumption issues in battery-powered applications, making it ideal for handheld devices, battery-powered applications, and ultra-portable devices. Specification Of MT53E256M32D2FW-046 IT:B Memory Size 8Gbit Memory Organization 256M x 32 Memory

Brand Name:Original Factory

Model Number:M321R8GA0PB0-CWM

Place of Origin:CN

M321R8GA0PB0-CWM Memory IC Chip BGA-288 Dual-Row In-Line Memory Module With Memory​ Product Description Of M321R8GA0PB0-CWM M321R8GA0PB0-CWM is a dual in-line memory module with memory in a 288-PIN package for high-performance applications such as servers...

Brand Name:Original Factory

Model Number:MT61K512M32KPA-14C:B

Place of Origin:CN

...Memory IC Chip GDDR6 SGRAM Memory 16Gbit Dynamic Random-Access Memory Product Description Of MT61K512M32KPA-14C:B MT61K512M32KPA-14C:B GDDR6 SGRAM is a high-speed dynamic random-access memory designed for applications requiring high bandwidth. It is internally configured as 16‐bank memory...

Brand Name:Original Factory

Model Number:AT45DB081E-SHN-T

Place of Origin:CN

... with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. AT45DB081E-SHN-T also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software ...