high voltage mosfet power transistor

Brand Name:ST

Model Number:TIP42C

Place of Origin:Original Factory

...Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Features Complementary PNP-NPN devices New enhanced series High...

Model Number:BAS316Z

..., Switching High-speed switching diodes This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for ...

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

... Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:FMMT491

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICM Peak Pulse Current 2 A PC Collector Power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:FMMT491

...Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICM Peak Pulse Current 2 A PC Collector Power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:TIP110

...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use AXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:TIP110

...Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use AXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power...

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:VISHAY

Model Number:SIHB22N60E-E3

Place of Origin:CHINA

... N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V Vgs(th)

Brand Name:Toshiba

Model Number:2SC5589

Place of Origin:Original Factory

...Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works from a 3.0V to 36V input voltage range, and provides up to 4A of continuous output current. The output voltage is adjustable from 30V down to 0.8V. The AOZ1284 integrates an N-channel high-side power MOSFET...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power...

Brand Name:Hua Xuan Yang

Model Number:AP8205S

Place of Origin:ShenZhen China

...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:AP8205S

Place of Origin:ShenZhen China

...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor...

Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet Power Transistor GENERAL FEATURES V DS = -30V,I D = -50A R DS(ON) < 18mΩ @ V GS =-4.5V R DS(ON) < 13mΩ @ V GS =-10V High

Brand Name:Hua Xuan Yang

Model Number:50P03NF TO-252

Place of Origin:ShenZhen China

...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications. Mosfet Power Transistor GENERAL FEATURES V DS = -30V,I D = -50A R DS(ON) < 18mΩ @ V GS =-4.5V R DS(ON) < 13mΩ @ V GS =-10V High

Brand Name:Hua Xuan Yang

Model Number:AOD407

Place of Origin:ShenZhen China

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) ...