gan rf power amplifier module

Brand Name:SWT

Model Number:SW-PA-10002000-45C

Place of Origin:China

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in a ...

Brand Name:SWT

Model Number:SW-PA-1050012750-55C

Place of Origin:China

Ku Band Power Amplifier 10.5-12.75 GHz Psat 500 W RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency...

Brand Name:OEM

Place of Origin:China

...) 50W(50dBm) In-band group delay ≤1us Gain 45±1.0,45±1.0 (external input 6dbm, power amplifier output 50dbm) In-band fluctuation (dB) ≤2.5 (peak-to-peak value) Input voltage standing wave ratio ≤1.35 Output ...

Brand Name:MXT

Model Number:PA1000T1500M 5W-28V

Place of Origin:SHENZHEN,CHINA

... power adjustment of 0.1W~10W, high frequency stability, power amplifier built-in high-power circulator and load , suitable for loads of various standing wave ratios; has a complete protection circuit to ensure the reliable operation of the power source.

Brand Name:SWT

Model Number:SW-PA-08001000-50C

Place of Origin:China

...designed for high-frequency applications. Frequency Range: Covering the 800MHz to 1000MHz frequency band, it is suitable for various wireless communication, RF testing, and industrial applications in high-frequency environments. High Power Output: With a

Brand Name:SWT

Model Number:SW-PA-00150500-53C

Place of Origin:China

... range of 15 MHz to 500 MHz, offering a Psat (saturated output power) of 53 dBm. Frequency Range: This power amplifier is suitable for amplifying signals across the frequency range of 15 MHz to 500 MHz, covering a wideband spectrum. Psat and Power Output:

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ...

Brand Name:SWT

Model Number:SWT-1041241015-0808-E1

Place of Origin:China

... P1dB of 15 dBm across the frequency range of 100 to 115 GHz. The DC power requirement for the amplifier is +8 VDC/250 mA. The input and output port configuration offers an inline structure with WR- 08 waveguides and UG-387/U-M ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPL1000SR

Wireless Communication Module QPL1000SR High-Performance GaN Low Noise Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:ICP0349PP7-1-300I

Wireless Communication Module ICP0349PP7-1-300I 2.7-3.5GHz 70W GaN PA MMIC Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Place of Origin:CN

Brand Name:Original Factory

Model Number:TGA2227

TGA2227 Wireless Communication Module 2 GHz - 22 GHz GaN Low Noise Amplifier [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Brand Name:SWT

Model Number:SWT-775

Place of Origin:China

...Power Amplifier 700-850 MHz Psat 42 dBm RF Power Amplifier Description SWT-775 is a 10Watt (+40dBm) output RF Power Amplifier operating from single 12V DC power supply with frequency range in 700-850MHz. FEATURES · Frequency Range: 700-850MHz · Gain: 43dB · Pout: +40dBm · Psat: +42dBm · IP3: +49dBm · DC Power...

Brand Name:TX TELSIG

Model Number:TX-RF 5.8G

Place of Origin:China

...RF Module for Power Amplifier The 5.8ghz PA RF module we always have different output power choices : 5W 10W 20W 40W 50W Price is different for each power All the parameters of PA can be customized depend on your request, If you have any customized parameters pls contact us freely. 5725-5850MHz 50W RF Power Amplifier...

Brand Name:SWT

Model Number:SW-PA-24002500-51C

Place of Origin:China

...Amplifier Module High Power Output Solid State Amplifier for Wireless Communication RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating Frequency 2400 2500 MHz P-Sat Power Output 51 dBm Power Gain Flatness ±1 dB Operating Voltage 20 24 30 VDC Gain Adjust Range 31 Gain Adjust Step 1 Gain Adjustment Linearity ±1 Power...

Brand Name:SWT

Model Number:SW-PS-57205860-51C

Place of Origin:China

...Amplifier Module High Power Amplifier for C-Band Wireless Communication RF / ELECTRICAL PARAMETER MIN TYP. MAX UNIT Operating Frequency 5720 5860 MHz P-Sat Power Output 51 dBm Power Gain Flatness ±1 dB Operating Voltage 20 24 30 VDC Gain Adjust Range 31 Gain Adjust Step 1 Gain Adjustment Linearity ±1 Power...

Brand Name:SWT

Model Number:SWT-140T

Place of Origin:China

...Power Amplifier 100-3000 MHz P1dB +18dBm RF Power Amplifier Description SWT-140T is a 43dB gain RF Amplifier, with frequency range of 100 MHz to 3000MHz. FEATURES · Frequency Range: 100-3000MHz · Gain: 43dB · P1dB: +18dBm · OIP3: +35dBm · Noise Figure: 3.6dB (typ.) · DC Power...

Brand Name:PAM-XIAMEN

Place of Origin:China

...GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld Freestanding GaN substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density. Specification of Freestanding GaN...

Brand Name:TeXin OEM

Model Number:TX-50W

Place of Origin:Shenzhen,China

...WIFI ,FPV drone signal shield device .Wide band 100-1000MHz 50Wpower amplifier using high frequency radio frequency technology that can effectively amplify the signal.When operate the 100-1000MHz coverage fully.And the product with two electronic wire one

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:EMM5075V

EMM5075V is a X-Band Power Amplifier MMIC. Part NO: EMM5075V Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely ...

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FMM5805GF-1

FMM5805GF-1 is a 17.7-19.7GHz Power Amplifier MMIC. . Part NO: FMM5805GF-1 Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These ...