eraser program

Brand Name:Original brand

Model Number:LPC51U68JBD64

Place of Origin:China

... via USB. Serial Wire Debug (SWD) with 4 breakpoints and 2 watchpoints. System tick timer. On-Chip memory: 256 KB on-chip flash programming memory with flash accelerator and 256 Byte page write and erase. Up to

Brand Name:GigaDevice

Model Number:GD25Q40CTIG

Place of Origin:CN

... SPI interface and 600μs programming speed Key Features 4M-bit Capacity: 512K-byte with 256 bytes per programmable page High-Speed Performance: 120MHz clock frequency with fast read capability Fast Program/Erase: Page Program time: 0.6ms typical Multiple SPI...

Brand Name:GigaDevice

Model Number:GD25Q80CTIGR

Place of Origin:CN

... device supports Standard, Dual, and Quad SPI interfaces with fast 600μs programming capabilities. Key Features 8M-bit Capacity: 1024K-Byte memory with 256 bytes per programmable page Fast Program/Erase Speed: Page Program time: 0.6ms typical Sector

Brand Name:PUYA

Model Number:P25D22H-SSH-IT

Place of Origin:CN

.../512K x 1 bit 1M/512K/256K x 2 bits Flexible Architecture for Code and Data Storage Uniform 256-byte Page Program Uniform 256-byte Page Erase Uniform 4K-byte Sector Erase Uniform

Brand Name:Wisecard Technology

Model Number:4428

Place of Origin:China

...Irreversible byte-wise write protection Serial three-wire bus End of programming indicated on data output erase cycles more than 100,000 times Each write / erase time 5MS Data retention for minimum of ten years Contact configuration and serial interface in

Brand Name:STMicroelectronics

Model Number:ST72F260G1M6

Place of Origin:Original

... Programming (ICP and IAP). 10K write/erase cycles guaranteed, data retention: 20 years at55°C. – 256 bytes RAM Attributes of ST72F260G1M6 Product Status Obsolete ...

Brand Name:CYPRESS

Model Number:S29AL008J70BFI023

Place of Origin:original

... (1 megabit x 8) of Flash memory. - 3.0V supply voltage with 5V tolerant inputs. - Sector architecture with 64Kbytes per sector. - Byte or word programming with a typical programming time of 45µs. - Embedded Erase and Program algorithms. - Embedded 4

Brand Name:CYPRESS

Model Number:S29AL016J70BFI020

Place of Origin:original

... memory • 3V supply voltage • Program/Erase operation • Dual I/O and Quad I/O operations • Fast access time: 70ns • Advanced write protection schemes • Page Program and Byte/Word Program • Low power consumption • Support for Security ID and

Brand Name:Cypress Semiconductor Corp

Model Number:S34ML04G200TFI000

Place of Origin:Multi-origin

...Disturb Management - Advanced Write Disturb Management - Program Suspend and Resume - Power-fail Control - Program/Erase Suspend - Fast Program Time - Data Protection - Built-in Bad Block Management - High Reliability - Low Power Consumption - Dual-channel

Brand Name:Adesto Technologies

Model Number:AT25DF021A-XMHN-T

Place of Origin:USA

... incorporates a uniform, block-erase architecture to provide application flexibility. These SPI‐compatible 2.5V to 3.6V products feature up to a 104MHz operating speed and fast program and erase times. The devices also include security features such

Brand Name:CYPRESS

Model Number:S25FL064LABMFI010

Place of Origin:Multi-origin

... parameter page size and a 64KB-byte sector size. The device provides a write protection feature and supports a full block erase, page program and sector erase commands.

Brand Name:Macronix

Model Number:MX25R6435FZAIL0

Place of Origin:Multi-origin

...) • 4KB sub-sector erase • 16-bit read/write and 24-bit read • 5V operating voltage • 2.7V to 3.6V operating voltage • -40°C to 85°C operating temperature • 8-pin UDFN package • Endurance: 100,000 program/erase cycles • Data retention: 10...

Brand Name:Intel

Model Number:EM63A165BM-5H

Place of Origin:original

..., low-power CMOS process -High-speed read access time: 55ns -Program/Erase cycles: 10,000 -Data retention: 20 years -Wide voltage range: 2.7V to 3.6V -EEPROM compatible -Low power consumption -Erase suspend/resume -Status register -Security register

Brand Name:Macronix

Model Number:MX68GL1G0FLT2I-11G

Place of Origin:original

...°C to 85°C • Write/Erase endurance: 10K/10K • Data retention: 10 years • Single supply voltage • Low power consumption • Reliable program/erase • High speed access time • Built-in error correction • Programmable read and write timing •

Brand Name:Infineon Technologies

Model Number:S29GL032N90TFI040

Place of Origin:original

... Package - Fast access times: 90ns - Data retention: 20 years - Endurance: 10,000 Program/Erase cycles - Erase operations: Sector, Block or Chip - Operating temperature: 0°C to 70°C - Programmable Burst Lengths: 4, 8, 16 and 32 - Supports 1.8V

Brand Name:Etron Technology, Inc.

Model Number:EM68C16CWQG-25H

Place of Origin:Multi-origin

...: 16K x 8 - Data Retention: 100 years - Endurance (Write/Erase Cycles): 100,000 - Maximum Current: 150mA - Program Time (typical): 150ms/word - Erase Time (typical): 500ms/sector - Write Time (typical): 5ms/byte - Pinout: 28 pins - Features: Low

Brand Name:MXIC

Model Number:MX25L12873FM2I-10G

Place of Origin:Original

...,217,728 x 1 bit structure • 4096 equal sectors with 4K byte each 256 equal sectors with 64K byte each - Any sector can be erased • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up

Brand Name:ATMEL

Model Number:AT25F512B-SSH-T

Place of Origin:CN

... based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25F512B, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well,

Brand Name:Renesas Design Germany GmbH

Model Number:AT25DF021A-SSHN-T

... consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data ...

Brand Name:Renesas Design Germany GmbH

Model Number:AT25DF021A-XMHN-T

... consumer based applications in which program code is shad owed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data ...