eraser program

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS25LP128-JBLE

... is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS25LP128-JKLE

... is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program operations. The

Brand Name:Macronix

Model Number:MX25L6406EMI-12G

... output (SO). Serial access to the device is enabled by CS# input. FEATURES GENERAL • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Serial Peripheral Interface

Brand Name:Microchip Technology

Model Number:SST39VF010-70-4I-WHE

... tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase)

Brand Name:Infineon Technologies

Model Number:S25FL256SAGNFI003

...bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lithography This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI ...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS25LP064A-JLLE

... is 100MHz), the fastest in the industry. The devices use a single low voltage power supply, ranging from 2.3 Volt to 3.6 Volt, to perform read, erase and program

Brand Name:Macronix

Model Number:MX25L6406EZNI-12G

... output (SO). Serial access to the device is enabled by CS# input. FEATURES GENERAL • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Serial Peripheral Interface

Brand Name:STMicroelectronics

Model Number:M27C2001-15F1

...erasable and programmable memory (EPROM) ideally suited for microprocessor systems requiring largeprograms.It isorganised as262,144by 8bits. ■ VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ”CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA ■ PROGRAMMING...

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS25LD020-JDLE

.... The devices use a single low voltage power supply, wide operating voltage ranging from 2.7 Volt to 3.6 Volt, to perform read, erase and program operations. The devices can

Brand Name:Original Factory

Model Number:GD25B256DFIGY

Place of Origin:CN

... Data Input (SI) and Serial Data Output (SO). Features Of GD25B256DFIGY Cycling Endurance and Data Retention Minimum 100,000 Program/Erase Cycles 20-year data

Brand Name:Microchip

Model Number:ATTINY24A-SSU

Place of Origin:Original

... Static Operation • High Endurance, Non-volatile Memory Segments –2K/4K/8K Bytes of In-System, Self-programmable Flash Program Memory •Endurance: 10,000 Write/Erase Cycles –128/256/512

Brand Name:STMicroelectronics

Model Number:STM8S003K3T6C

Place of Origin:Malaysia

...Program memory: 8 Kbyte Flash memory; data retention 20 years at 55 °C after 100 cycles • RAM: 1 Kbyte • Data memory: 128 bytes true data EEPROM; endurance up to 100 k write/erase cycles Clock, reset and supply management • 2.95 V to 5.5 V operating

Brand Name:PG

Place of Origin:Shenzhen, China

Model Number:G2864TLCB/G28128TLCB/G28256TLCB/G2564LTCB/G25128LTCB/G25256LTCB

... program/erase cycles and 3 million hours MTBF across multiple capacity options. CB EMMC5.1 Specifications Model G2864GTLCB G28128TLCB G28256TLCB NAND ...

Brand Name:PG

Model Number:G2864TLCB/G28128TLCB/G28256TLCB/G2564LTCB/G25128LTCB/G25256LTCB

Place of Origin:Shenzhen, China

... = 1.7V~1.95V(typical 1.8V), 2.7V~3.6V (typical 3.3V) Temperature Operating : -25℃ ~ 85℃ Storage : -40℃ ~ 85℃ Program/Erase Cycle >= 2000 Application scenario 1. Smartphones and tablets: eMMC is widely used

Brand Name:Original Factory

Model Number:M29F800FB5AN6E2

Place of Origin:CN

...M29F800FB5AN6E2 is 8Mbit Parallel NOR Flash Embedded Memory IC, It enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. Specification Of M29F800FB5AN6E2 Part Number: M29F800FB5AN6E2 Product Category: NOR Flash Mounting...

Brand Name:Original Factory

Model Number:TC58NYG2S0HBAI4

Place of Origin:CN

... E2PROM) organized as (4096 + 256) bytes  64 pages  2048 blocks. TC58NYG2S0HBAI4 has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in

Brand Name:Original Factory

Model Number:TC58NVG1S3HBAI6

Place of Origin:CN

...Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes  64 pages  2048 blocks. TC58NVG1S3HBAI6 has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory

Brand Name:Microchip Technology/ATMEL

Model Number:ATF1504ASV-15AU44

Place of Origin:Malaysia

... Mfr Marvell Technology Series 88E1112 Package Tray/REEL Part Status Active Programmable Type In System Programmable (min 10K program/erase cycles) Delay Time tpd

Brand Name:GigaDevice

Model Number:GD25Q80ETIGR

Place of Origin:China

... pages Quad SPI interface supporting up to 133MHz clock frequency; Quad I/O data transfer up to 532Mbit/s 100,000 minimum program/erase cycles with 20-year data retention Low standby current of 11µA for power-sensitive

Model Number:CAT25160YI

... and Software Protection • Block Write Protection− Protect 1/4, 1/2 or Entire EEPROM Array • Low Power CMOS Technology • 1,000,000 Program/Erase Cycles • 100 Year Data Retention •