erasable programmable read only memory chip

Brand Name:Macronix

Model Number:MX25V5126FM1I

Place of Origin:Mult-origin

... - Read/Write Speed: 25MHz/25MHz - Endurance: 100,000 Program/Erase cycles - ECC: Built-in BCH ECC Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic ...

Brand Name:Lattice

Model Number:LFE3-70EA-8FN672I

Place of Origin:Original Factory

LFE3-70EA-8FN672I Programmable Read Only Memory 66.5K LUTs 380 I/O SERDES1.2V-8Spd IND Specifications Product Attribute Attribute Value Manufacturer: Lattice Product Category: FPGA - Field Programmable Gate Array Number of Logic Elements: 67000 LE Number...

Brand Name:Original Factory

Model Number:MT35XL02GCBA1G12-0SIT

Place of Origin:CN

.../ERASE operations. Nonvolatile and volatile configuration registers enable respective default and temporary settings such as READ operation dummy clock cycles and wrap modes, memory protection, output buffer impedance, SPI protocol type and XIP mode.

Brand Name:Original Factory

Model Number:MT25QL256BBB8ESF-CSIT

Place of Origin:CN

.../ERASE operations. Nonvolatile and volatile configuration registers enable respective default and temporary settings such as READ operation dummy clock cycles and wrap modes, memory protection, output buffer impedance, SPI protocol type and XIP mode.

Brand Name:ST

Model Number:M24C02-WMN6TP

Place of Origin:Original Factory

M24C02-WMN6TP SOIC-8 Chip Flash Memory Chip EEPROMs-Serial I2C Interface M24C02 Description: The M24C01(C02) is a 1(2)-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 128 (256) × 8 bits. The M24C01/02-W can be accessed...

Brand Name:original

Model Number:EDW4032BABG-70-F-R

Place of Origin:original

EDW4032BABG-70-F-R Original DRAM GDDR5 4G 128MX32 FBGA Memory Features • VDD = VDDQ = 1.6V/1.55V/1.5V ±3% and 1.35V ±3% • Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s • 16 internal banks • Four bank groups for tCCDL = 3 tCK • 8n-bit prefetch architecture: 256-...

Brand Name:original

Model Number:EDW4032BABG-70-F-R

Place of Origin:original

EDW4032BABG-70-F-R Original DRAM GDDR5 4G 128MX32 FBGA Memory Features • VDD = VDDQ = 1.6V/1.55V/1.5V ±3% and 1.35V ±3% • Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s • 16 internal banks • Four bank groups for tCCDL = 3 tCK • 8n-bit prefetch architecture: 256-...

Brand Name:Macronix

Model Number:MX25V512FZUI

Place of Origin:Mult-origin

... from -40°C to 85°C - High speed read/write performance - Programmable instruction set for flexibility - Low power consumption for extended battery life - Durable and reliable construction - Compatible with industry standard ...

Brand Name:Microchip

Model Number:PIC12F615

Place of Origin:Original & New

PIC12F615 MCU Chips SOP8 PIC12F615-ISN 8 Bit Flash Programmable Memory Chip Device Program Memory Data Memory Self Read/ Self Write I/O 10-bit A/D (ch) Comparators ECCP Timers 8/16-bit Voltage Range Flash (words) SRAM (bytes) PIC12F609 1024 64 — 5 0 1 — ...

Brand Name:Microchip

Model Number:PIC12F615

Place of Origin:Original & New

PIC12F615 MCU Chips SOP8 PIC12F615-ISN 8 Bit Flash Programmable Memory Chip Device Program Memory Data Memory Self Read/ Self Write I/O 10-bit A/D (ch) Comparators ECCP Timers 8/16-bit Voltage Range Flash (words) SRAM (bytes) PIC12F609 1024 64 — 5 0 1 — ...

Brand Name:ICMAX

Model Number:IMD128M16R39CG8GNF-125

Place of Origin:CN

...Memory Chip IMD128M16R39CG8GNF-125 DDR3 SDRAM512M4 – 64 Meg x 4 x 8 Banks256M8 – 32 Meg x 8 x 8 Banks Features VDD = VDDQ = 1.5V ±0.075V 1.5V center-terminated push/pull I/O Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT)for data, strobe, and mask signals Programmable CAS READ...

Brand Name:Original Factory

Model Number:TC58NVG1S3HBAI6

Place of Origin:CN

...Memory IC Chip Single 3.3V 2Gbit NAND Electrically Erasable And Programmable Read-Only Memory Product Description Of TC58NVG1S3HBAI6 The TC58NVG1S3HBAI6 is a single 3.3 V 2 Gbit (2,281,701,376bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) Bytes  64 pages  2048 blocks. The device has two 2176-Bytes static registers which allow program and read...

Brand Name:Original

Model Number:DS2430AP+

Place of Origin:Original

DS2430AP+ Electrically Erasable Programmable Read Only Memory BU4S11G2TR WE04X150JTL Memory Data Storage FEATURES  256-bit Electrically Erasable Programmable Read Only Memory (EEPROM) plus 64-bit one-time programmable application register  Unique, ...

Brand Name:Original

Model Number:DS2430AP+

Place of Origin:Original

...) plus 64-bit one-time programmable application register  Unique, factory-lasered and tested 64-bit registration number (8-bit family code + 48-bit ...

Brand Name:Original

Model Number:DS2430AP+

Place of Origin:Original

DS2430AP+ Electrically Erasable Programmable Read Only Memory BU4S11G2TR WE04X150JTL Memory Data Storage FEATURES  256-bit Electrically Erasable Programmable Read Only Memory (EEPROM) plus 64-bit one-time programmable application register  Unique, ...

Brand Name:Original

Model Number:DS2430AP+

Place of Origin:Original

...) plus 64-bit one-time programmable application register  Unique, factory-lasered and tested 64-bit registration number (8-bit family code + 48-bit ...

Brand Name:Original Factory

Model Number:TC58NYG2S0HBAI4

Place of Origin:CN

... Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes  64 pages  2048 blocks. TC58NYG2S0HBAI4 has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in

Place of Origin:PHILIPPINE

Brand Name:Micron Technology

Model Number:MT28F800B5WP-8T

... bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing or erasing the device is done with a 5V VPP voltage, while all operations are performed with a 5V VCC. Due to process technology advances, 5V VPP is optimal for application and

Brand Name:Microchip Technology / Atmel

Model Number:AT24C256C-SSHL-T

Place of Origin:Original Factory

EEPROM Memory IC 256Kb (32K x 8) 1MHz 8-SOIC Chip IC ATMEL Original AT24C256C-SSHL-T Description: The AT24C256C provides 262,144 bits of Serial Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 32,768 words of 8 bits each. The ...