dynamic random access memory

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

...16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as ...

Brand Name:ISSI

Model Number:IS42S32200L-7BLI

Place of Origin:CN

DYNAMIC Random Access Memory DRAM 512K Bits SYNCHRONOUS Dynamic RAM IS42S32200L-7BLI FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/...

Brand Name:Original Factory

Model Number:MT41K256M16TW-107 XIT:P

Place of Origin:CN

.... Specification Of MT41K256M16TW-107 XIT:P Memory Organization 256M x 16 Memory Interface Parallel Clock Frequency 933 MHz Access Time 20 ns Voltage - Supply 1.283V ~ 1.45V Operating Temperature -40°C ~ 95°C (TC) Applications Of MT41K256M16TW-107 ...

Brand Name:Original Factory

Model Number:MT41K128M16JT-125 IT:K

Place of Origin:CN

...Memory IC Chip 2Gbit DDR3L SDRAM Memory Chip FBGA96 Product Description Of MT41K128M16JT-125 IT:K MT41K128M16JT-125 IT:K is a 2Gbit capacity DDR3L Synchronous Dynamic Random‑Access Memory (SDRAM) in an FBGA-96 package. Specification Of MT41K128M16JT-125 IT:K Type: SDRAM - DDR3L Memory Size: 2 Gbit Data Bus Width: 16 bit Maximum Clock Frequency: 800 MHz Package / Case: FBGA-96 Organization: 128 M x 16 Access...

Place of Origin:PHILIPPINE

Brand Name:ISSI

Model Number:IS41LV8205-60J

...16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Description: The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 random accesses within a single row with access cycle time as ...

Brand Name:ISSI

Model Number:IS43LQ32256B-062BLI

Place of Origin:CN

Dynamic Random Access Memory DRAM 8Gb x16 x2 channel Mobile LPDDR4/LPDDR4X IS43LQ32256B-062BLI FEATURES • Configuration: - 256Mb x16 x 2 channels - 8 internal banks per channel • Low-voltage Core and I/O Power Supplies VDD1 = 1.70-1.95V VDD2 = 1.06-1.17V VDDQ = 1.06-1.17V (LPDDR4) VDDQ = 0.57-0.65V (LPDDR4X) • • LVSTL(Low Voltage Swing Terminated Logic) I/O Interface Internal VREF and VREF Training • Dynamic...

Brand Name:Original Factory

Model Number:MT53E256M16D1FW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1FW-046 WT:B 4Gbit Parallel DRAM LPDDR4 Memory Chips​ Product Description Of MT53E256M16D1FW-046 WT:B MT53E256M16D1FW-046 WT:B is 4Gbit Parallel DRAM LPDDR4 Memory IC. It is a high-speed CMOS, dynamic random-access memory. Specification Of MT53E256M16D1FW-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4X Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:W9825G6KH-6I

Place of Origin:CN

Memory IC Chip W9825G6KH-6I 256Mbit Parallel High Speed SDRAM Memory IC 54-TSOP​ Product Description Of W9825G6KH-6I W9825G6KH-6I is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16 bits. W9825G6KH delivers a data bandwidth of up to 200M words per second. Specification Of W9825G6KH-6I Memory Type Volatile Memory Format DRAM Technology SDRAM Memory Size 256Mbit Memory Organization 16M x 16 Memory

Brand Name:Original Factory

Model Number:MT53E256M16D1DS-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E256M16D1DS-046 WT:B 4Gbit SDRAM Mobile LPDDR4 Memory IC VFBGA-200​ Product Description Of MT53E256M16D1DS-046 WT:B MT53E256M16D1DS-046 WT:B is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Specification Of MT53E256M16D1DS-046 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2DS-053 AUT:E

Place of Origin:CN

Memory IC Chip MT53E384M32D2DS-053 AUT:E 12Gbit 1.866 GHz LPDDR4 Memory Product Description Of MT53E384M32D2DS-053 AUT:E MT53E384M32D2DS-053 AUT:E 12Gb Low Power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. Specification Of MT53E384M32D2DS-053 AUT:E Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR4 Memory Size 12Gbit Memory...

Brand Name:Original Factory

Model Number:MT41K256M16TW-107:P

Place of Origin:CN

...Memory IC Chip 4Gbit DDR3L SDRAM Memory Chip FBGA96​ Product Description Of MT41K256M16TW-107:P MT41K256M16TW-107:P is a 4Gbit, DDR3L Synchronous Dynamic Random Access Memory (SDRAM) Chips, it is a low voltage version of the DDR3 (1.5V) SDRAM. Specification Of MT41K256M16TW-107:P Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR3L Memory Size 4Gbit Memory Organization 256M x 16 Memory...

Brand Name:Original Factory

Model Number:MT53E512M64D2NW-046 WT:B

Place of Origin:CN

Memory IC Chip MT53E512M64D2NW-046 WT:B 32Gbit SDRAM - LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E512M64D2NW-046 WT:B MT53E512M64D2NW-046 WT:B Low-power DDR4 SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 SDRAM Mobile Memory FBGA178 Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a 8Gbit, LPDDR3 Synchronous Dynamic Random Access Memory (SDRAM) Chips. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:EDB4432BBPA-1D-F-R

Place of Origin:CN

...Memory IC Chip 4Gbit Mobile LPDDR2 SDRAM Memory Chip WFBGA168​ Product Description Of EDB4432BBPA-1D-F-R EDB4432BBPA-1D-F-R is a single-channel Mobile LPDDR2 Synchronous Dynamic Random Access Memory (SDRAM) Chip with a capacity of 4Gbit, housed in a WFBGA-168 package. Specification Of EDB4432BBPA-1D-F-R Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR2 Memory Size 4Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-093 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit LPDDR3 Synchronous Dynamic Random-Access Memory​ Product Description Of MT52L256M32D1PF-093 WT:B MT52L256M32D1PF-093 WT:B is an SDRAM - Mobile LPDDR3 memory IC with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-093 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:MT52L256M32D1PF-107 WT:B

Place of Origin:CN

...Memory IC Chip 8Gbit Mobile LPDDR3 SDRAM Memory Chip FBGA178​ Product Description Of MT52L256M32D1PF-107 WT:B MT52L256M32D1PF-107 WT:B is a mobile LPDDR3 Synchronous Dynamic Random-Access Memory​ (SDRAM) Chip with a capacity of 8Gbit, housed in a 178-FBGA (11.5x11) package. Specification Of MT52L256M32D1PF-107 WT:B Memory Type Volatile Memory Format DRAM Technology SDRAM - Mobile LPDDR3 Memory Size 8Gbit Memory...

Brand Name:Original Factory

Model Number:MT53E384M32D2FW-046 WT:E

Place of Origin:CN

... CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Compared to DDR4, its peak bandwidth is 33% faster. Compared with standard DRAM, LPDDR4 memory power consumption in standby mode is

Brand Name:Original Factory

Model Number:MT53E1G64D4HJ-046 AAT:A

Place of Origin:CN

Memory IC Chip MT53E1G64D4HJ-046 AAT:A Automotive 64G LPDDR4 Memory IC Product Description Of MT53E1G64D4HJ-046 AAT:A MT53E1G64D4HJ-046 AAT:A is a high-speed CMOS dynamic random access memory. LPDDR4 memory is optimized to address power consumption in battery-powered applications. Specification Of MT53E1G64D4HJ-046 AAT:A Product Category: DRAM Type: SDRAM Mobile - LPDDR4 Memory...

Brand Name:Original Factory

Model Number:MT53E1G64D4SP-046 WT:C

Place of Origin:CN

... CMOS dynamic random access memory. The memory device is designed in multi-chip package (MCP) and package stack (PoP) to save PCB space. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. Specification Of

Brand Name:Original Factory

Model Number:MT53E1G64D4NW-046 WT:C

Place of Origin:CN

Memory IC Chip MT53E1G64D4NW-046 WT:C 64 Gbit SDRAM LPDDR4 Memory IC 432-VFBGA Product Description Of MT53E1G64D4NW-046 WT:C MT53E1G64D4NW-046 WT:C 64Gb low-power SDRAM (LPDDR4) is a high-speed CMOS dynamic random access memory. These memory devices are designed in multi-chip packages (MCP) and package stacks (PoP) to save PCB space. The LPDDR4 memory...