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All dynamic random access memory wholesalers & dynamic random access memory manufacturers come from members. We doesn't provide dynamic random access memory products or service, please contact them directly and verify their companies info carefully.
| Total 3363 products from dynamic random access memory Manufactures & Suppliers |
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Brand Name:Original Factory Model Number:MT25QL512ABB8E12-0SIT Place of Origin:CN ... register that is not directly accessible to users. Specification Of MT25QL512ABB8E12-0SIT Part Number: MT25QL512ABB8E12-0SIT Program Performance: 2MB/sec Address Modes: 3-byte Protocols: ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT29F2G08ABBGAH4-AAT:G Place of Origin:CN ...Memory Chips Product Description Of MT29F2G08ABBGAH4-AAT:G MT29F2G08ABBGAH4-AAT:G is 2Gbit Parallel Asynchronous NAND Flash Memory Chips. Specification Of MT29F2G08ABBGAH4-AAT:G Part Number MT29F2G08ABBGAH4-AAT:G Chipset Validation N/A Density 2Gb FBGA Code NX014 Op. Temp. -40C to +105C Features Of MT29F2G08ABBGAH4-AAT:G Memory Interface: Parallel Access... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:YAGEO Model Number:AC0402KRX7R9BB102 Place of Origin:USA ...n when the power is turned off. This chip is designed to operate at high speed, with a maximum access time of 50ns. It requires 2.7 V to 3.6 V of voltage supply and is designed for surface mount. This chip has a memory capacity of 4Mbit and organization of |
Shenzhen Xinyuanpeng Technology Co., Ltd.
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Brand Name:Original Factory Model Number:MT62F1G64D8WT-031 AV XT:B Place of Origin:CN Memory IC Chip MT62F1G64D8WT-031 AV XT:B Low-Power DRAM LPDDR5 64G Memory IC Product Description Of MT62F1G64D8WT-031 AV XT:B MT62F1G64D8WT-031 AV XT:B addresses these requirements with a 50% increase in data access speeds. The devices also have more than ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Original Factory Model Number:MT62F512M64D4EK-031 WT:B Place of Origin:CN Memory IC Chip MT62F512M64D4EK-031 WT:B 32Gbit Parallel LPDDR5 Memory IC 441-TFBGA Description Of MT62F512M64D4EK-031 WT:B MT62F512M64D4EK-031 WT:B (32Gb) Mobile devices and AI with LPDDR5 DRAM designed to meet the needs of 5G networks. The LPDDR5 device addresses the next generation memory needs of AI and 5G, delivering 50 percent faster data access... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:ST Model Number:STM8S105S4T6C Place of Origin:CN ...Access Line 16 MHz MCU STM8S105S4T6C Access Line 16 MHz STM8S 8-bit microcontroller with up to 32 Kbyte Flash memory, integrated EEPROM, 10-bit ADC, and comprehensive communication interfaces including timers, UART, SPI, and I²C. Key Features Core Architecture 16 MHz advanced STM8 core with Harvard architecture 3-stage pipeline for enhanced performance Extended instruction set Memory Configuration Program memory... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:Microchip Technology Model Number:AT29C040A-90TU ...Memory Memory Mfr Microchip Technology Series - Package Tray Product Status Obsolete Memory Type Non-Volatile Memory Format FLASH Technology FLASH Memory Size 4Mbit Memory Organization 512K x 8 Memory Interface Parallel Write Cycle Time - Word, Page 10ms Access... |
J&T ELECTRONICS LTD
Hongkong |
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Brand Name:Infineon Model Number:S29GL01GT11FHIV10 ...Memory Memory Mfr Infineon Technologies Series GL-T Package Tray Product Status Active Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 1Gbit Memory Organization 128M x 8 Memory Interface Parallel Write Cycle Time - Word, Page 60ns Access... |
J&T ELECTRONICS LTD
Hongkong |
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Model Number:S29AL008J70TFI010 Brand Name:CYPRESS ... Memory Format FLASH Technology FLASH - NOR Memory Size 8Mbit Memory Organization 1M x 8, 512K x 16 Memory Interface Parallel Write Cycle Time - Word, Page 70ns Access Time 70 ns Voltage - Supply 2.7V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) |
J&T ELECTRONICS LTD
Hongkong |
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Brand Name:ISSI Model Number:IS61WV204816BLL-10TLI ... Type Volatile Memory Format SRAM Technology SRAM - Asynchronous Memory Size 32Mbit Memory Organization 2M x 16 Memory Interface Parallel Write Cycle Time - Word, Page 10ns Access Time 10 ns Voltage - Supply 2.4V ~ 3.6V Operating Temperature -40°C ~ 85°C |
J&T ELECTRONICS LTD
Hongkong |
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Brand Name:Infineon Technologies Model Number:CY7C1380D-167AXI ... SRAM Technology SRAM - Synchronous, SDR Memory Size 18Mbit Memory Organization 512K x 36 Memory Interface Parallel Clock Frequency 167 MHz Write Cycle Time - Word, Page - Access Time 3.4 ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ |
J&T ELECTRONICS LTD
Hongkong |
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Brand Name:Samsung Model Number:K4A4G165WF-BCTD Place of Origin:TH/CN/PH ... cells, address decoders, and sense amplifiers. Memory IC common features include: - Memory capacity: This refers to the amount of data that the Memory IC can store. Higher memory capacity values mean more data can be stored. - Access time: This refers to |
Shenzhen GS Electronic Technology Co., Ltd. CN
Guangdong |
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Brand Name:FUJITSU Model Number:MB85RC16PNF-G-JNERE1 Place of Origin:JP ... cells, address decoders, and sense amplifiers. Memory IC common features include: - Memory capacity: This refers to the amount of data that the Memory IC can store. Higher memory capacity values mean more data can be stored. - Access time: This refers to |
Shenzhen GS Electronic Technology Co., Ltd. CN
Guangdong |
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Brand Name:FOVA Model Number:FG-98C ...Dynamic range/second °/s ±500 2 Bias stability (1σ, 10s) °/h ≤0.010 3 Zero bias repeatability (1σ) °/h ≤0.010 4 Repeatability over all temperatures °/h ≤0.03 5 Scale factor nonlinearity (1σ) ppm ≤10 6 Scale factor repeatability (1σ) ppm ≤10 7 Full temperature scale factor repeatability (1σ) ppm ≤50 8 Random... |
Shenzhen FOVA Technology Co.,Ltd
Fujian |
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Brand Name:PG Model Number:G2864TLCB/G28128TLCB/G28256TLCB/G2564LTCB/G25128LTCB/G25256LTCB Place of Origin:Shenzhen, China ... 4.41 interfaces, this memory card offers versatile connectivity options for various devices. When it comes to performance, this EMMC memory card stands out with impressive speeds. The random write speed can reach up to 4,000 IOPS, allowing for quick and |
China Chips Star Semiconductor Co., Ltd.
Guangdong |
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Brand Name:ISSI Model Number:IS41LV8205-60J Quick Detail: 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Specifications: part no. IS41LV8205-60J Manufacturer ISSI supply ability 965 datecode 03+ package SOJ remark new and original stock Competitive Advantage: Warranty :180days for all goods ... |
Mega Source Elec.Limited
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Categories:DDR Memory Country/Region:china ... a premium aesthetic to your gaming rig. Key Benefits: Efficient Heat Dissipation: Minimizes the risk of system instability under overclocking or heavy workloads. Dynamic RGB Lighting: Customizable lighting effects to match your setup and |
Shenzhen Senhai Industrial Technology Co., Ltd.
Guangdong |
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Categories:Memory IC Chip Country/Region:china The JS48F4400P0TB00A,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the ... |
ALIXIN STOCK (HONG KONG) CO., LIMITED
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Brand Name:YAHAM Model Number:YH-KXB-L-D16 Place of Origin:China ... V12°/H30° Dimming Level 32 Luminance 12400nits Electric protection Overload protection and short circuit protection Maintenance back access Color Full-color Max. power consumption 300W/M² Operating temperature -15℃-65℃ |
Yaham Optoelectronic Co., Ltd
Guangdong |