dynamic memory

Brand Name:Original Factory

Model Number:XC7Z007S-2CLG400E

Place of Origin:CN

...XC7Z007S-2CLG400E memory interface unit includes a dynamic memory controller and static memory interface modules. The dynamic memory controller supports DDR3, DDR3L, DDR2, and LPDDR2 memories. XC7Z007S-2CLG400E static memory controllers support a NAND...

Brand Name:Original Factory

Model Number:XC7Z007S-1CLG400I

Place of Origin:CN

...memory controller and static memory interface modules. The dynamic memory controller supports DDR3, DDR3L, DDR2,and LPDDR2 memories. Specification Of XC7Z007S-1CLG400I Part Number XC7Z007S-1CLG400I Number of Logic Elements: 23000 LE Number of I/Os: 100 I/O

Brand Name:MDTIC

Model Number:MT41J128M16HA-15E-D

Place of Origin:Original

... bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • CAS (READ) latency (CL):

Brand Name:ISSI, Integrated Silicon Solution Inc

Model Number:IS42S16400J-7TL

Product Details Description The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit...

Brand Name:TI

Model Number:BQ24075TRGTR

BQ24075TRGTR Power Path Management IC Battery Management 1.5A USB-Friendly Li Ion Batt Charger 1 Features Fully Compliant USB Charger Selectable 100mA and 500mA Maximum Input Current 100mA Maximum Current Limit Ensures Compliance to USB-IF Standard Input ...

Brand Name:Ti

Model Number:LM285BYMX

LM285BYMX LM285DR-1-2 LM285MX-2.5/NOPB Power Regulator IC Voltage References FEATURES Adjustable from 1.24V to 5.30V Operating Current of 10μA to 20mA 1% and 2% Initial Tolerance 1Ω Dynamic Impedance Low Temperature Coefficient DESCRIPTION The LM185/LM285/...

Brand Name:Ti

Model Number:BQ24232RGTR

BQ24232RGTR Power Path Management IC Battery Management 1.6MHz Sync Sw-Mode LiIon/Poly Bat Chrgr 1 Features Fully Compliant USB Charger – Selectable 100-mA and 500-mA Maximum Input Current – 100-mA Maximum Current Limit Ensures Compliance to USB-IF ...

Brand Name:micron

Model Number:MT41J128M16JT-093:K

Place of Origin:CN

... bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on

Place of Origin:PHILIPPINE

Brand Name:Alliance Semiconductor Corporation

Model Number:Alliance Semiconductor Corporation

..., extremely low power and wide operating margins at component and system levels. The Alliance 16Mb DRAM family is optimized for use as main memory in

Brand Name:Allen-bradley

Model Number:2711R-T7T

Place of Origin:USA

... in 4…10 in. display sizes. They include 800 MHz CPU processors, high-resolution displays with LED backlights, and high flash memory and dynamic memory. The

Brand Name:Allen-bradley

Model Number:2711R-T7T

Place of Origin:USA

... in 4…10 in. display sizes. They include 800 MHz CPU processors, high-resolution displays with LED backlights, and high flash memory and dynamic memory. The built-in

Brand Name:STMicroelectronics

Model Number:STM32F401RBT6TR

Place of Origin:Multi-origin

...Dhrystone 2.1) performance • Up to 256 Kbytes of Flash memory • Up to 64 Kbytes of SRAM with ECC • Flexible static and dynamic memory configuration • Up to 2x 12-bit, 2 MSPS ADC • Up to 2x 12-bit DAC • USB 2.0 full-speed device controller • ...

Brand Name:Ti

Model Number:TPS53679RSBR

... Loop Compensations Configurable with Non-Volatile Memory (NVM) for Low External Component Counts Individual Phase Current Calibrations and Reports Dynamic Phase Shedding with Programmable Current Threshold for Optimizing Efficiency at Light and Heavy

Brand Name:Ti

Model Number:TPS53659RSBR

... Configurable with Non-Volatile Memory (NVM) for Low External Component Counts Individual Phase Current Calibrations and Reports Dynamic Phase Shedding with Programmable Current Threshold for Optimizing Efficiency at Light and Heavy Loads Fast Phase

Brand Name:MICRON

Model Number:MT48LC4M16A2TG

Place of Origin:Original

... – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous interface (all signals are registered on the ...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2P-6A:G TR

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...

Brand Name:Micron Technology Inc.

Model Number:MT48LC16M16A2B4-7E IT:G

Product Details General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive ...

Brand Name:Winbond Electronics

Model Number:W949D6DBHX5I

Product Details GENERAL DESCRIPTION W9425G6DH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. Using pipelined architecture and 0.11 µm process technology, W9425G6DH delivers...

Brand Name:Micron Technology Inc.

Model Number:MT48LC2M32B2P-6:G TR

Product Details GENERAL DESCRIPTION The 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864-bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge...