600v transistor array chip

Brand Name:Original Factory

Model Number:SCT4026DW7HRTL

Place of Origin:CN

N-Channel Transistors SCT4026DW7HRTL Integrated Circuit Chip TO-263-7L SiC Power MOSFET​ Product Description Of SCT4026DW7HRTL SCT4026DW7HRTL is Low on-resistance Automotive Grade N-channel SiC power MOSFET Transistors. Specification Of SCT4026DW7HRTL...

Brand Name:Original Factory

Model Number:NVBG020N090SC1

Place of Origin:CN

... Transistors, package is D2PAK-7L. Specification Of NVBG020N090SC1 Part Number: NVBG020N090SC1 Vds - Drain-Source Breakdown Voltage: 900 V Id - Continuous ...

Brand Name:Original Factory

Model Number:SCTWA35N65G2V

Place of Origin:CN

...Chip SCTWA35N65G2V Silicon carbide Power MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package. Specification Of SCTWA35N65G2V Part Number SCTWA35N65G2V Transistor...

Brand Name:Original Factory

Model Number:TW070J120B,S1Q

Place of Origin:CN

Integrated Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3​ Product Description Of TW070J120B,S1Q TW070J120B,S1Q is Silicon Carbide N-Channel MOS Transistors, Through Hole TO-3P(N). Specification Of TW070J120B,S1Q Part Number TW070J120B...

Brand Name:Original Factory

Model Number:TW107N65C,S1F

Place of Origin:CN

Silicon Carbide MOS Transistors TW107N65C,S1F N-Channel TO-247-3 650V IC Chips​ Product Description Of TW107N65C,S1F TW107N65C,S1F is N-Channel 650V 20A(Tc) 76W (Tc), Silicon Carbide MOS Transistors, package is TO-247-3, Through Hole. Specification Of ...

Brand Name:Original Factory

Model Number:TW027N65C,S1F

Place of Origin:CN

Integrated Circuit Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide​ Product Description Of TW027N65C,S1F TW027N65C,S1F is 650V 58A(Tc) 156W (Tc) Silicon Carbide N-Channel MOS Transistors, Through Hole TO-247. Specification Of TW027N65C,...

Brand Name:Original Factory

Model Number:SCT30N120H

Place of Origin:CN

Integrated Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors Product Description Of SCT30N120H SCT30N120H is N-Channel 1200 V 40A (Tc) 270W (Tc) Transistors Surface Mount,the package is TO-263-3. Specification Of SCT30N120H Part Number ...

Brand Name:Original Factory

Model Number:TW060N120C,S1F

Place of Origin:CN

Integrated Circuit Chip TW060N120C,S1F N-Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW060N120C,S1F TW060N120C,S1F is Silicon Carbide N-Channel MOS Transistors, package is TO-247-3. Specification Of TW060N120C,S1F Part Number ...

Brand Name:Original Factory

Model Number:TW140N120C,S1F

Place of Origin:CN

Integrated Circuit Chip TW140N120C,S1F Single FETs Transistors TO-247-3 N-Channel​ Product Description Of TW140N120C,S1F TW140N120C,S1F is 1200V 20A(Tc) 107W(Tc) N-Channel Silicon Carbide Transistors, package is TO-247-3, Through Hole. Specification Of ...

Brand Name:Original Factory

Model Number:SCTH40N120G2V-7

Place of Origin:CN

...Chip SCTH40N120G2V-7 N-Channel Surface Mount Transistors Product Description Of SCTH40N120G2V-7 SCTH40N120G2V-7 device features remarkably low on-resistance per unit area and very good switching performance. Specification Of SCTH40N120G2V-7 Part Number SCTH40N120G2V-7 Transistor...

Brand Name:Original Factory

Model Number:TW030N120C,S1F

Place of Origin:CN

Single FETs MOSFETs Transistors TW030N120C,S1F Integrated Circuit Chip TO-247-3​ Product Description Of TW030N120C,S1F TW030N120C,S1F 1200V Silicon Carbide MOSFET Transistors, package is TO-247-3, Through Hole. Specification Of TW030N120C,S1F Part Number: ...

Brand Name:Original Factory

Model Number:TW048N65C,S1F

Place of Origin:CN

Integrated Circuit Chip TW048N65C,S1F TO-247-3 Silicon Carbide N-Channel Transistors​ Product Description Of TW048N65C,S1F TW048N65C,S1F is 650V 65mOhms SiC N-Channel Transistors, Through Hole, package is TO-247-3. Specification Of TW048N65C,S1F Part ...

Brand Name:TI

Model Number:CD74HC138M

Place of Origin:China

CD74HC138M Electrnocs Component Transistor Chip IC Electronics China Supplier MOSFET Metal Oxide Semiconductor Field Effect Transistor FEATURES • Select One Of Eight Data Outputs Active Low for 138, Active High for 238 • l/O Port or Memory Selector • Three...

Brand Name:IR

Model Number:IRF540NPBF

Place of Origin:China

IRF540NPBF 3pin Transistor Electrnocs Component Transistor Chip IC Electronics FEATURES Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating ...

Brand Name:ON

Model Number:2N5458

Place of Origin:China

​Linear Power Mosfet Transistor 2N5458 JFETs Led Televisions IC Chips JFETs − General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features • N−Channel...

Model Number:CA3140AMZ

Place of Origin:original factory

...voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input circuit to provide very high input impedance, very

Brand Name:Original Factory

Model Number:AONS62922

Place of Origin:CN

Integrated Circuit Chip AONS62922 120V 85A N-Channel MOSFET Transistors DFN8​ Product Description Of AONS62922 AONS62922 is 120V N-Channel AlphaSGT MOSFET Transistors. Features Of AONS62922 Trench Power AlphaSGTTM technology 120V Low RDS(ON) Logic level ...

Categories:Integrated Circuit Chip

Country/Region:china

... with soft and fast recovery Emitter Controlled 7 diode. Specification Of IKW25N120CS7 Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2

Brand Name:STMicroelectronics

Model Number:STW48NM60N

Place of Origin:Shenzhen, China

STW48NM60N Transistors MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube General Description : This device is an N-channel Power MOSFET developed using the second generation of ...

Brand Name:INFINEON/IR

Model Number:IRGB10B60KDPBF

Place of Origin:Germany

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode ...