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All 600v transistor array chip wholesalers & 600v transistor array chip manufacturers come from members. We doesn't provide 600v transistor array chip products or service, please contact them directly and verify their companies info carefully.
| Total 21964 products from 600v transistor array chip Manufactures & Suppliers |
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Place of Origin:Original IRFPS38N60LPBF Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 38A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original R6046ANZ1C9 Specifications Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 46A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW13NM60N Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW13N60M2 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STY80NM60N Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 74A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHA21N60EF-E3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHF15N60E-E3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHF15N60E-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TK16E60W5,S1VX Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 15.8A (Ta) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHP21N60EF-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHP30N60E-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STP13NK60ZFP Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4.5V @ 100µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STFI24NM60N Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW26NM60ND Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original SIHG30N60E-GE3 Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 29A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW28NM60ND Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW20NM60FD Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TPH3202PD Specifications Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On,Min Rds On) 8V Vgs(th) (Max) @ Id 2.5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original STW24NM60N Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 17A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Place of Origin:Original TPH3202PS Specifications Part Status Active FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On,Min Rds On) 8V Vgs(th) (Max) @ Id 2.5V @ 250µA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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