GP4068D Power Mosfet Transistor INSULATED GATE BIPOLAR TRANSISTOR
|
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ......
Anterwell Technology Ltd.
|
MGW12N120D Power Mosfet Transistor Insulated Gate Bipolar Transistor with Anti-Parallel Diode
|
... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ......
ChongMing Group (HK) Int'l Co., Ltd
|
QM10HB-H DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE MITSUBISHI IGBT Power Module
|
QM10HB-H is a DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in ......
Mega Source Elec.Limited
|
STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
|
... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ......
Shenzhen Retechip Electronics Co., Ltd
|
Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode
|
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd
|
Durable Insulated Gate Bipolar Transistor Multipurpose IRG4PH50UD
|
... IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
|
FeNiCo Shell Robust 8pin To Transistor Packages Header
|
....43um and Au≥1.3um;Cap is plated Ni:2~11.43um Product Formation Material Quantity 1. Base 4J29 1 2. Glass insulator BH-A/K 8 3. Pin 4J29 8 4 .Cap 4J42 1 Insulation Resistance 500V DC resistance between all the pins linked and base is ≥1...
JOPTEC LASER CO., LTD
|
800V Field Effect Transistor / N Channel Transistor 3N80 Mosfet ITO220
|
... low gate charge Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and operation with...
Shenzhen Canyi Technology Co., Ltd.
|
GT20J101 Thyristor Module Insulated Gate Bipolar Transistor Silicon N Channel
|
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.7 V (max) Characteristic Symbol ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
Alumina Ceramic Insulator Plates Machinable Ceramic Sheet For Transistor Heat Sink
|
...Insulator Plates Sheet 12x18mm for Transistor Heat Sink Aluminum ceramic Sheet is suitable for the IC, MOS transistors, schottky, IGBT and so on need to surface heat source of heat. Alumina ceramic plates can withstand high temperature and maintain high strength and hardness. Alumina plates also have superb performances in electrical insulation......
Dongguan Ming Rui Ceramic Technology Co.,ltd
|