ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor
|
...ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for ......
Anterwell Technology Ltd.
|
50V Other Electronic Components MOSFET Transistors SOT-23 LBSS138LT1G
|
... Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applications 3. Miniature SOT–23 Surface Mount Package saves board space 4. Pb−Free Package May be Available. The G...
Shenzhen Res Electronics Limited
|
Integrated Circuit Chip MSC025SMA120J N-Channel Power MOSFET Transistors
|
...Chip MSC025SMA120J N-Channel Power MOSFET Transistors Product Description Of MSC025SMA120J MSC025SMA120J combine a formidable array of technologies into a single package, optimized for reliability, efficiency, space-saving, and reduced assembly time. ......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor
|
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR P Channel Mosfet
|
D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ......
Wisdtech Technology Co.,Limited
|
ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor
|
...ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for ......
ChongMing Group (HK) Int'l Co., Ltd
|
Voltage 20V P Channel SMD Mosfet Transistor IRF7404TRPBF Current 7.7A SOP8 Package
|
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of...
Shenzhen ATFU Electronics Technology ltd
|
IRF640NSTRLPBF N Channel Mosfet Transistor 200V Surface Mount D2PAK
|
...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...
Shenzhen Koben Electronics Co., Ltd.
|
NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications
|
NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta......
Shenzhen Sai Collie Technology Co., Ltd.
|
IRFZ44N Mosfet Transistor IRFZ44N Transistor N-Channel Mosfet Power Transistor TO-220
|
Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|