Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate
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Metal Oxide Semiconductor Field Effect Transistor With RoHS Certificate Metal Oxide Semiconductor Field Effect Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Avalanche energy tested Improved dv/dt capability,high ruggedness Metal Oxide Semiconductor......
Shenzhen Canyi Technology Co., Ltd.
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MR511 Gas Sensor Through The Adsorption Of Gas On The Surface Of Metal Oxide Semiconductor Caused By The Principle Of Thermal And Electrical Conduction Changes To Achieve Detection
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...The Surface Of Metal Oxide Semiconductor Caused By The Principle Of Thermal And Electrical Conduction Changes To Achieve Detection Product description: MR511 gas sensor through the adsorption of gas on the surface of metal oxide semiconductor caused by ......
ShenzhenYijiajie Electronic Co., Ltd.
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Integrated Circuit Chip High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcom MC68HC705B16N MOTOROLA PLC
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MC68HC705B16N is a High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit . Part NO: MC68HC705B16N Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The ......
Mega Source Elec.Limited
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Metal Oxide Semiconductor Mosfet Power Transistor High Rugged Avalanche
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Metal Oxide Semiconductor Mosfet Power Transistor High Rugged Avalanche Mosfet Power Transistor Description -30V/-60A R DS(ON) = 4.8mΩ(typ.) @V ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors
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Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage......
Beijing Silk Road Enterprise Management Services Co.,LTD
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Original thyristor mosfet TO-252-3 n-channel 150V 3A metal oxide semiconductor tube IRFR4615TRLPBF
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Shenzhen Anxinruo Technology Co., Ltd.
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CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified
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Product Overview The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free......
Hefei Purple Horn E-Commerce Co., Ltd.
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Surge Arresters MOV Metal Oxide Varistor Zinc Oxide Varistor For Semiconductor D30×30
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...metal oxide varistor for semiconductor D30×30 Metal oxide varistor MOV Blocks is a ceramic semiconductor element made of zinc oxide as the main material, its resistance value changes with the change of applied voltage, is the core component of metal oxide arrester, and its quality directly determines the performance of arrester. Our company's metal oxide......
XIAN XIWUER ELECTRONIC AND INFO. CO., LTD
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Surge Arresters MOV Metal Oxide Varistor For Semiconductor Component , IEC60099-4
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...Metal Oxide Varistor For Semiconductor Component , IEC60099-4 Quick Detail: 1.Good non-liner speciality 2.No redundant current 3.Large galvanization 4.Smart response 5.Low clamping voltage , good protection performance Description: Metal Oxide Varistor is a ceramic semiconductor component made of zinc oxide as the main material.Its resistance value varies with applied voltage and it is the core components of metal oxide...
Guangdong Uchi Electronics Co.,Ltd
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Large Absorbing Nonlinear Big Size 275V RMS 32mm MYL Metal Oxide Varistor MOV 32D431K Voltage Dependent Resistor VDR
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... as the main material of metal oxide semiconductor components,and they can be divided into symmetric (non-polarity) and asymmetric (with polarity) according to the voltage-ampere characteristic.The nonlinear resistors are more sensitive to voltage, when...
Aolittel Technology Co.,Ltd
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