M25PE16-VMW6TG linear integrated circuits page - erasable serial flash memory
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...erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout Features ■ SPI bus compatible serial interface ■ 16-Mbit page-erasable Flash memory ■ Page size: 256 bytes – Page write in 11 ms (typical) – Page program in 0.8 ms (typical) – Page erase in 10 ms (typical) ■ Subsector erase (4 Kbytes) ■ Sector erase (64 Kbytes) ■ Bulk erase......
ChongMing Group (HK) Int'l Co., Ltd
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GD25Q64CSIG Flash Memory Chips High Performance and Capacity for Your Needs
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...Memory Chips High Performance and Capacity for Your Needs Product Listing: GigaDevice GD25Q64CSIG 8Mb Serial Flash Memory Chip Features: - 8Mb (1Mb x 8) Serial Flash Memory - Voltage supply range from 1.8V to 3.6V - 4KB Sector Erase - 1,000,000 Program/Erase Cycles - 1.8V Low Voltage Operation - 1MHz Serial Clock Frequency - SPI, Dual/Quad I/O Bus Modes - Dual/Quad Output Read Support - Program/Erase......
Shenzhen Sai Collie Technology Co., Ltd.
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NOR Flash Memory Chip S25HS512TFABHI010 Integrated Circuit Chip 24-TBGA IC Chips
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...Memory Chip S25HS512TFABHI010 Integrated Circuit Chip 24-TBGA IC Chips Product Description Of S25HS512TFABHI010 S25HS512TFABHI010 The erased state of each memory bit is a logic 1. Programming changes a logic 1 (HIGH) to a logic 0 (LOW). Only an erase operation can change a memory bit from a 0 to a 1. An erase......
ShenZhen Mingjiada Electronics Co.,Ltd.
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AM28F010-90PC - Advanced Micro Devices - 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
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...memories offer the most cost-effective and reliable read/write non-volatile random access memory. The Am28F010 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The...
Mega Source Elec.Limited
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Durable Erasable PROM Memory Chip IC EEPROM 256K I2C 400KHZ 8 SOIC 24LC256T-I/SN
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...Erasable PROM Memory Chip IC EEPROM 256K I2C 400KHZ 8SOIC Part Number VCC Range Max. Clock Frequency Temp. Ranges 24AA256 1.7V-5.5V 400 kHz(1) I 24LC256 2.5V-5.5V 400 kHz I, E 24FC256 1.7V-5.5V 1 MHz I, Note 1: 100 kHz for VCC < 2.5V GENERAL DESCRIPTIONS The Microchip Technology Inc. 24AA256/24LC256/ 24FC256 (24XX256*) is a 32K x 8 (256 Kbit) Serial Electrically Erasable......
Shenzhen ATFU Electronics Technology ltd
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M25pe16-Vmp6tg Memory Ic Chip Vdfpn-8 512Kbit To 32Mbit Erasable Seral
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...Memory Ic Chip Vdfpn-8 512 Kbit To 32 Mbit Erasable Seral Flash Ic Chip Description The M25Pxx is a 512Kbit to 32Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory......
Shenzhen Retechip Electronics Co., Ltd
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Original IC Memory Chip NAND512W3A2CN6E Integrated Circuit
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...Memory Chip NAND512W3A2CN6E Integrated Circuit Products Specifications Category Integrated Circuits (ICs)/Memory/Memory (ICs) Manufacturer micron Package 48-TSOP Memory Size 512Mbit Voltage - Supply 2.7V~3.6V Operating temperature -40℃~+85℃ Program / Erase Cycles 100,000 cycles Clock Frequency - Data Retention - TDR (Year) 10 Years Block Erase......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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M25PE80-VMN6TP electronic IC Chip 8 Mbit low voltage Page-Erasable Serial Flash memory
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...Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features ■ SPI bus compatible serial interface ■ 8-Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms (typical) – Page Program in 0.8 ms (typical) – Page Erase in 10 ms (typical) ■ SubSector Erase (4 Kbytes) ■ Sector Erase (64 Kbytes) ■ Bulk Erase......
Anterwell Technology Ltd.
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TC58NVG1S3HTA00 TSOP48 Parallel FLASH Memory Ic Chip NAND SLC 2Gbit 25 Ns
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...Memory IC 2Gbit Parallel 25 Ns 48-TSOP I Datasheet:TC58NVG1S3HTA00.pdf FLASH - NAND (SLC) Memory IC 2Gbit Parallel 25 ns 48-TSOP I Features: ● Organization Memory cell array 2176*128K*8 Register 2176*8 Page size 2176 bytes Block size 128K+8K bytes ● Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase......
Shenzhen Zhaocun Electronics Co., Ltd.
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M29F800FB5AN6E2 IC FLASH 8MBIT PARALLEL 48TSOP I Alliance Memory, Inc.
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... READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM. The device is divided into blocks that can be erased independently,...
Sanhuang electronics (Hong Kong) Co., Limited
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