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FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

Categories Electronic IC Chips
Brand Name: FAIRCHILD
Model Number: FDP085N10A
Certification: Original Factory Pack
Place of Origin: America
MOQ: 5pcs
Price: Negotiation
Payment Terms: T/T, Western Union,PayPal
Supply Ability: 5600PCS
Delivery Time: 1 Day
Packaging Details: please contact me for details
Drain to Source Voltage: 100V
Single Pulsed Avalanche Energy: 269mJ
Peak Diode Recovery dv/dt: 6.0V/ns
Operating and Storage Temperature Range: -55 to +175°C
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    FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

    FDP085N10A N-Channel PowerTrench MOSFET High Power Mosfet Transistors

    Features

    • RDS(on) = 7.35mΩ ( Typ.)@ VGS = 10V, ID = 96A

    • Fast Switching Speed

    • Low Gate Charge

    • High Performance Trench Technology for Extremely Low RDS(on)

    • High Power and Current Handling Capability

    • RoHS Compliant
    General Description
    This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    Application
    • DC to DC Converters

    • Synchronous Rectification for Telecommunication PSU

    • Battery Charger

    • AC motor drives and Uninterruptible Power Supplies

    • Off-line UPS

    Thermal Characteristics​

    SymbolParameterRatingsUnits
    RθJCThermal Resistance, Junction to Case0.8°C/W
    RθJAThermal Resistance, Junction to Ambient62.5°C/W


    Typical Performance Characteristics


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    Quality FDP085N10A  N-Channel PowerTrench  MOSFET High Power Mosfet Transistors for sale
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